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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 5, Pages 478–483
DOI: https://doi.org/10.21883/FTP.2020.05.49265.9341 (Mi phts5233) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor physics

Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure

O. S. Soboleva, V. S. Golovin, V. S. Yuferev, P. S. Gavrina, N. A. Pikhtin, S. O. Slipchenko, A. A. Podoskin

Ioffe Institute, St. Petersburg
Full-text PDF (475 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2020.05.49265.9341
Abstract: A 2D carrier transport model to be used in studying the spatial current dynamics in laser thyristors is presented. The model takes into account such features as optical feedback, impact ionization, and drift velocity saturation in strong electric fields. It is shown that there is current localization during laser-thyristor switch-on. A relationship is demonstrated between the distribution nonuniformity of the control current and its amplitude and position of the initial switch-on region. The time of laser-thyristor switch-on is 13 ns at a feed voltage of 26V, with a time of switch-on spreading over the entire 200-$\mu$m stripe width of $\sim$65 ns. These parameters remain invariable irrespective of the switch-on spatial dynamics.
Keywords: laser thyristor, current localization, AlGaAs/GaAs, impact ionization, transport in heterostructures.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation МК-3208.2019.8
The study was supported by a grant of the President of the Russian Federation for young candidates of science (MK-3208.2019.8).
Received: 26.12.2019
Revised: 30.12.2019
Accepted: 30.12.2019
English version:
Semiconductors, 2020, Volume 54, Issue 5, Pages 575–580
DOI: https://doi.org/10.1134/S1063782620050140
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. S. Soboleva, V. S. Golovin, V. S. Yuferev, P. S. Gavrina, N. A. Pikhtin, S. O. Slipchenko, A. A. Podoskin, “Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 478–483; Semiconductors, 54:5 (2020), 575–580
Citation in format AMSBIB
\Bibitem{SobGolYuf20}
\by O.~S.~Soboleva, V.~S.~Golovin, V.~S.~Yuferev, P.~S.~Gavrina, N.~A.~Pikhtin, S.~O.~Slipchenko, A.~A.~Podoskin
\paper Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 5
\pages 478--483
\mathnet{http://mi.mathnet.ru/phts5233}
\crossref{https://doi.org/10.21883/FTP.2020.05.49265.9341}
\elib{https://elibrary.ru/item.asp?id=42906061}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 5
\pages 575--580
\crossref{https://doi.org/10.1134/S1063782620050140}
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  • https://www.mathnet.ru/eng/phts/v54/i5/p478
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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