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This article is cited in 3 scientific papers (total in 3 papers)
Lasers
High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures
S. O. Slipchenkoa, D. N. Romanovicha, P. S. Gavrinaa, D. A. Veselova, T. A. Bagaevb, M. A. Laduginb, A. A. Marmalyukb, N. A. Pikhtina a Ioffe Institute, St. Petersburg
b JSC M. F. Stel'makh Polyus Research Institute, Moscow
Abstract:
The characteristics of high-power semiconductor lasers with an 800 μm emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures with three optically uncoupled laser sections are studied. The maximum power achieved under pumping by current pulses with an amplitude of 47 A and a duration of 1 μs is 110 W with the maximum active region heating not exceeding 4.7 °C. At a pulse duration of 860 μs, the maximum optical power is 22.6 W, and the decrease in the optical power to the pulse end reaches 6.7%. A decrease in the laser pulse duration to 85 μs leads to an increase in the peak laser power to 41.4 W at a pump current amplitude of 20 A.
Keywords:
semiconductor laser, tunnel-coupled heterostructures.
Received: 08.11.2021
Citation:
S. O. Slipchenko, D. N. Romanovich, P. S. Gavrina, D. A. Veselov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, N. A. Pikhtin, “High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures”, Kvantovaya Elektronika, 52:2 (2022), 174–178 [Quantum Electron., 52:2 (2022), 174–178]
Linking options:
https://www.mathnet.ru/eng/qe17986 https://www.mathnet.ru/eng/qe/v52/i2/p174
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