Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 2023, Volume 53, Number 1, Pages 11–16 (Mi qe18156)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch

S. O. Slipchenkoa, A. A. Podoskina, V. V. Zolotareva, L. S. Vavilovaa, A. Yu. Leshkoa, M. G. Rastegaevaa, I. V. Miroshnikova, I. S. Shashkina, N. A. Pikhtina, T. A. Bagaevb, M. A. Laduginb, A. A. Padalitsab, A. A. Marmalyukb, V. A. Simakovb

a Ioffe Institute, St. Petersburg
b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
References:
Abstract: We present a study of electrical and optical characteristics of the new design of a thyristor–laser diode mini-bar vertical stack, utilizing a 2-dimensional multi-element thyristor array (2D META) as a current switch, targeted for generating short (tens of nanoseconds) high-power optical pulses. It is shown that reducing the size of the anode contact of single 2D META elements to 200 μm provides the conditions for uniform switch-on of all elements. It is shown that in the long pulse mode with a pulse width of 14.6 ns, the peak optical power reaches 85 W, which corresponds to the peak current of 119 A (19.8 A per array element). At the same time, the maximum repetition rate reaches 700 kHz in the long pulse mode for an operating voltage of 15 V. In the short pulse mode with a pulse width of 6.4 ns and a repetition rate of 1 MHz, the peak optical power reaches 47 W, which corresponds to the peak current generated in the vertical stack circuit of 60 A (10 A per array element). It is shown that the characteristics of the 2D META as a high current switch do not change with increasing repetition rate for both operating modes.
Keywords: semiconductor laser, semiconductor laser array, thyristor, nanosecond pulses.
Funding agency Grant number
Russian Science Foundation 19-79-30072
Received: 23.09.2022
Accepted: 23.09.2022
English version:
Bull. Lebedev Physics Institute, 2023, Volume 50, Issue suppl. 5, Pages S527–S534
DOI: https://doi.org/10.3103/S1068335623170141
Document Type: Article
Language: Russian


Citation: S. O. Slipchenko, A. A. Podoskin, V. V. Zolotarev, L. S. Vavilova, A. Yu. Leshko, M. G. Rastegaeva, I. V. Miroshnikov, I. S. Shashkin, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. A. Simakov, “High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch”, Kvantovaya Elektronika, 53:1 (2023), 11–16 [Bull. Lebedev Physics Institute, 50:suppl. 5 (2023), S527–S534]
Linking options:
  • https://www.mathnet.ru/eng/qe18156
  • https://www.mathnet.ru/eng/qe/v53/i1/p11
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024