High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses

We report in detail the main results of the work on the creation of high-power semiconductor laser diodes based on asymmetric semiconductor InGaAs(P)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses, the concept of which was presented at the Ioffe Institute. The main technological approaches for producing highly strained active regions of lasers for the spectral range up to 1100 nm are considered. The results of studies of high-power cw multimode semiconductor lasers emitting in the wavelength ranges of 780–850, 900–980, and 1000–1100 nm, high-power semiconductor lasers operating in a pulsed generation regime, and high-power lasers with an ultrawide emitting aperture are presented. The main factors that determine the saturation of the output optical power of high-power semiconductor lasers are discussed.