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Kvantovaya Elektronika, 2021, Volume 51, Number 10, Pages 905–908 (Mi qe17918)  
This article is cited in 3 scientific papers (total in 3 papers)

Lasers

InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

N. A. Volkova, T. A. Bagaeva, D. R. Sabitova, A. Yu. Andreeva, I. V. Yarotskayaa, A. A. Padalitsaa, M. A. Ladugina, A. A. Marmalyukab, K. V. Bakhvalovc, D. A. Veselovc, A. V. Lyutetskiyc, N. A. Rudovac, V. A. Streletsc, S. O. Slipchenkoc, N. A. Pikhtinc

a "Sigm Plyus" Ltd., Moscow
b National Engineering Physics Institute "MEPhI", Moscow
c Ioffe Institute, St. Petersburg
Full-text PDF (594 kB) Citations (3)
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Abstract: Semiconductor lasers based on double separate-confinement InGaAs/AlGaAs/GaAs heterostructures with a broadened waveguide are studied. The experimentally obtained samples of lasers with undoped and doped waveguide layers are compared. The differences in their current–voltage characteristics are analysed. It is found that a decrease in the series resistance and the cutoff voltage of the current–voltage characteristic makes it possible to delay the beginning of the output optical power saturation and increase the efficiency of the studied semiconductor lasers to 70% – 72%.
Keywords: semiconductor laser, asymmetric waveguide, doping, output power.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 02.а03.21.0005
Received: 22.06.2021
English version:
Quantum Electronics, 2021, Volume 51, Issue 10, Pages 905–908
DOI: https://doi.org/10.1070/QEL17628
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Volkov, T. A. Bagaev, D. R. Sabitov, A. Yu. Andreev, I. V. Yarotskaya, A. A. Padalitsa, M. A. Ladugin, A. A. Marmalyuk, K. V. Bakhvalov, D. A. Veselov, A. V. Lyutetskiy, N. A. Rudova, V. A. Strelets, S. O. Slipchenko, N. A. Pikhtin, “InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics”, Kvantovaya Elektronika, 51:10 (2021), 905–908 [Quantum Electron., 51:10 (2021), 905–908]
Citation in format AMSBIB
\Bibitem{VolBagSab21}
\by N.~A.~Volkov, T.~A.~Bagaev, D.~R.~Sabitov, A.~Yu.~Andreev, I.~V.~Yarotskaya, A.~A.~Padalitsa, M.~A.~Ladugin, A.~A.~Marmalyuk, K.~V.~Bakhvalov, D.~A.~Veselov, A.~V.~Lyutetskiy, N.~A.~Rudova, V.~A.~Strelets, S.~O.~Slipchenko, N.~A.~Pikhtin
\paper InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900--920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
\jour Kvantovaya Elektronika
\yr 2021
\vol 51
\issue 10
\pages 905--908
\mathnet{http://mi.mathnet.ru/qe17918}
\elib{https://elibrary.ru/item.asp?id=47514481}
\transl
\jour Quantum Electron.
\yr 2021
\vol 51
\issue 10
\pages 905--908
\crossref{https://doi.org/10.1070/QEL17628}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000706856400008}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85117181495}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Квантовая электроника Quantum Electronics
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    Full-text PDF :29
    References:26
    First page:28
     
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