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This article is cited in 3 scientific papers (total in 3 papers)
Lasers
Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500–1600 nm
Yu. K. Bobretsovaa, D. A. Veselova, N. V. Voronkovaa, S. O. Slipchenkoa, V. A. Streletsa, M. V. Bogdanovichb, P. V. Shpakb, M. A. Laduginc, A. A. Marmalyukcd, N. A. Pikhtina a Ioffe Institute, St. Petersburg
b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
d National Engineering Physics Institute "MEPhI", Moscow
Abstract:
A laser source for bleaching passive Q-switches of erbium – ytterbium lasers is developed and studied. The developed and studied compact pulsed module (peak power exceeding 10 W in a pulse with a duration of 1 μs at a wavelength around 1550 nm) is made on the basis of a semiconductor lasers with an ultra-narrow waveguide integrated with a pulsed pump card. To optimise the output laser characteristics, a series resistance was used in the laser pump circuit. The powers of the free-space and fibre-coupled modules at a temperature of 25 °C are 15 and 12 W, respectively, at a pulse shape close to rectangular.
Keywords:
absorption coefficient, semiconductor laser, internal optical losses, pulsed pumping, energy barrier, ultra-narrow waveguide.
Received: 30.01.2019
Citation:
Yu. K. Bobretsova, D. A. Veselov, N. V. Voronkova, S. O. Slipchenko, V. A. Strelets, M. V. Bogdanovich, P. V. Shpak, M. A. Ladugin, A. A. Marmalyuk, N. A. Pikhtin, “Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500–1600 nm”, Kvantovaya Elektronika, 49:5 (2019), 488–492 [Quantum Electron., 49:5 (2019), 488–492]
Linking options:
https://www.mathnet.ru/eng/qe17036 https://www.mathnet.ru/eng/qe/v49/i5/p488
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Abstract page: | 333 | Full-text PDF : | 115 | References: | 23 | First page: | 36 |
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