V. V. Shamakhov, D. N. Nikolaev, V. S. Golovin, D. A. Veselov, S. O. Slipchenko, N. A. Pikhtin, “Study of multimode semiconductor lasers with buried mesas”, Kvantovaya Elektronika, 49:12 (2019), 1172–1174 [Quantum Electron., 49:12 (2019), 1172

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Kvantovaya Elektronika, 2019, Volume 49, Number 12, Pages 1172–1174 (Mi qe17155)

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

Study of multimode semiconductor lasers with buried mesas

V. V. Shamakhov, D. N. Nikolaev, V. S. Golovin, D. A. Veselov, S. O. Slipchenko, N. A. Pikhtin

Ioffe Institute, St. Petersburg

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Abstract: A buried-mesa AlGaAs/GaAs/GaInAs laser heterostructure emitting at a wavelength of 1050 nm is formed on a GaAs substrate by MOCVD. Mesa-stripe laser diodes with an aperture of 100 μm based on the obtained heterostructure are fabricated and studied. The internal optical losses of the laser diodes are 2.4 cm^-1. The output powers in both directions achieved at a cavity length of 2900 μm in the cw and pulsed regimes were 2.1 and 23 W, respectively.

Keywords: semiconductor laser, laser diode, heterostructure, MOCVD, buried mesa.

Funding agency	Grant number
Russian Science Foundation	19-79-30072

Received: 17.09.2019
Revised: 02.10.2019

English version:
Quantum Electronics, 2019, Volume 49, Issue 12, Pages 1172–1174
DOI: https://doi.org/10.1070/QEL17135

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: V. V. Shamakhov, D. N. Nikolaev, V. S. Golovin, D. A. Veselov, S. O. Slipchenko, N. A. Pikhtin, “Study of multimode semiconductor lasers with buried mesas”, Kvantovaya Elektronika, 49:12 (2019), 1172–1174 [Quantum Electron., 49:12 (2019), 1172–1174]

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https://www.mathnet.ru/eng/qe/v49/i12/p1172

This publication is cited in the following 1 articles:

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