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This article is cited in 5 scientific papers (total in 5 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating
I. S. Shashkin, O. S. Soboleva, P. S. Gavrina, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin Ioffe Institute, St. Petersburg
Abstract:
The characteristics of semiconductor chip modulators providing the angular deflection of a laser beam due to all-electric modulation of the optical characteristics of a semiconductor heterostructure are theoretically studied. Designs for quantum-confined semiconductor waveguide heterostructures with a distributed Bragg reflector integrated on the heterostructure surface are developed. The design of a waveguide structure including 20 periods of coupled asymmetric quantum wells, which provide an optical confinement factor of the waveguide mode of 20%, and an optimized doping profile allowing a uniform electric-field distribution to be maintained in the quantum-well region in the entire range of operating voltages are proposed. In this waveguide structure, the change in the refractive index due to the quantum-confined Stark effect reaches 0.086 when the control signal changes from 0 to 6 V. It is shown that the spatial (angular) scanning of the laser beam emitted from the surface of a distributed Bragg mirror with a divergence of less than 0.1$^{\circ}$ in the range of 1$^{\circ}$–2$^{\circ}$ is feasible for the proposed waveguide structure design.
Keywords:
Quantum Confinement Heterostructures, Optical Confinement Factor, Distributed Bragg Reflector (DBR), Waveguide Mode, Proposed Waveguide Structure.
Received: 14.05.2018 Accepted: 21.05.2018
Citation:
I. S. Shashkin, O. S. Soboleva, P. S. Gavrina, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, “All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1491–1498; Semiconductors, 52:12 (2018), 1595–1602
Linking options:
https://www.mathnet.ru/eng/phts5666 https://www.mathnet.ru/eng/phts/v52/i12/p1491
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