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This article is cited in 3 scientific papers (total in 3 papers)
Lasers
High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture
S. O. Slipchenko, D. N. Romanovich, V. A. Kapitonov, K. V. Bakhvalov, N. A. Pikhtin, P. S. Kop'ev Ioffe Institute, Russian Academy of Sciences, St. Petersburg
Abstract:
High-power quasi-cw semiconductor lasers with an emitting aperture 800 μm wide and a continuous p-contact are developed. Laser operation with a pulse duration of 1 ms, a repetition rate of 10 Hz, and a maximum peak power of 87 W at a wavelength 1060 – 1070 nm is demonstrated under pumping by current pulses with am amplitude of 97 A. Experimental estimates show that overheating of the active region at the end of the laser pulse at a current of 97 A may reach 36.7 °C.
Keywords:
semiconductor lasers, mesa-stripe design, heterostructure, quasi-cw regime.
Received: 12.11.2021 Accepted: 12.11.2021
Citation:
S. O. Slipchenko, D. N. Romanovich, V. A. Kapitonov, K. V. Bakhvalov, N. A. Pikhtin, P. S. Kop'ev, “High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture”, Kvantovaya Elektronika, 52:4 (2022), 340–342 [Quantum Electron., 52:4 (2022), 340–342]
Linking options:
https://www.mathnet.ru/eng/qe18014 https://www.mathnet.ru/eng/qe/v52/i4/p340
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Abstract page: | 137 | Full-text PDF : | 7 | References: | 20 | First page: | 7 |
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