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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 1, Pages 86–95
DOI: https://doi.org/10.21883/FTP.2021.01.50394.9518 (Mi phts5100) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Manufacturing, processing, testing of materials and structures

Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon

P. V. Seredinab, D. L. Goloshchapova, Yu. Yu. Khudyakova, I. N. Arsent'evc, D. N. Nikolaevc, N. A. Pikhtinc, S. O. Slipchenkoc, H. Leisted

a Voronezh State University, Voronezh, Russia
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Yekaterinburg, Russia
c Ioffe Institute, St. Petersburg, Russia
d Karlsruhe Nano Micro Facility H.-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, German
Full-text PDF (2050 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2021.01.50394.9518
Abstract: The purpose of the study is to investigate the effect of a new type of compliant substrate based on an AlGaAs superstructure layer (SL) and a protoporous Si (proto-Si) layer formed on a crystal Si ($c$-Si) layer on the practical implementation and specific features of the epitaxial growth of GaAs layers by metal–organic chemical vapor deposition. It is for the first time shown that the low-temperature growth of high-crystal-quality epitaxial GaAs films can be implemented due to the use of compliant SL/proto-Si substrates. The introduction of a SL into the composition of a compliant substrate in addition to proto-Si makes it possible to neutralize a number of negative effects of low-temperature growth, to reduce the level of stresses in the epitaxial layer, to protect it from self-doping with Si atoms, to reduce the number of technological operations of the growth of transition buffer layers, and to improve the structural and morphological characteristics of the epitaxial layer.
Keywords: GaAs, Si, por-Si, superstructure layer.
Funding agency Grant number
Russian Science Foundation 19-72-10007
Ministry of Education and Science of the Russian Federation FZGU-2020-0036
The study was supported by the Russian Science Foundation, project no. 19-72-10007.
The part of the study performed by P.V. Seredin was supported by the Ministry of Science and Higher Education of the Russian Federation in accordance with the government order to institutes of higher education, project no. FZGU-2020-0036.
The technological studies of MOCVD epitaxial processes were conducted in accordance with the planned state program of Ioffe Institute.
Received: 03.09.2020
Revised: 10.09.2020
Accepted: 10.09.2020
English version:
Semiconductors, 2021, Volume 55, Issue 1, Pages 122–131
DOI: https://doi.org/10.1134/S1063782621010140
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. V. Seredin, D. L. Goloshchapov, Yu. Yu. Khudyakov, I. N. Arsent'ev, D. N. Nikolaev, N. A. Pikhtin, S. O. Slipchenko, H. Leiste, “Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 86–95; Semiconductors, 55:1 (2021), 122–131
Citation in format AMSBIB
\Bibitem{SerGolKhu21}
\by P.~V.~Seredin, D.~L.~Goloshchapov, Yu.~Yu.~Khudyakov, I.~N.~Arsent'ev, D.~N.~Nikolaev, N.~A.~Pikhtin, S.~O.~Slipchenko, H.~Leiste
\paper Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 1
\pages 86--95
\mathnet{http://mi.mathnet.ru/phts5100}
\crossref{https://doi.org/10.21883/FTP.2021.01.50394.9518}
\elib{https://elibrary.ru/item.asp?id=44862609}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 1
\pages 122--131
\crossref{https://doi.org/10.1134/S1063782621010140}
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    Citing articles in Google Scholar: Russian citations, English citations
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