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This article is cited in 5 scientific papers (total in 5 papers)
Semiconductor physics
Ñlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin Ioffe Institute, St. Petersburg
Abstract:
The work is devoted to the study of the formation features of high-quality closed modes based on total internal reflection effect in rectangular resonators of large (up to thousands wavelengths) size based on InGaAs/GaAs/AlGaAs laser heterostructures. Features of the spectral composition and spatial configurations of closed mode structures are experimentally investigated. The presence of frequency combs in the spectra was demonstrated and their correspondence to separate spatial configurations of closed modes was shown. The effect of a change in pumping and temperature on the mode composition is also considered.
Received: 29.12.2018 Revised: 14.01.2019 Accepted: 14.01.2019
Citation:
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Ñlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 839–843; Semiconductors, 53:6 (2019), 828–832
Linking options:
https://www.mathnet.ru/eng/phts5493 https://www.mathnet.ru/eng/phts/v53/i6/p839
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