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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 6, Pages 839–843
DOI: https://doi.org/10.21883/FTP.2019.06.47739.9058a (Mi phts5493) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor physics

Ñlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures

A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin

Ioffe Institute, St. Petersburg
Full-text PDF (397 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2019.06.47739.9058a
Abstract: The work is devoted to the study of the formation features of high-quality closed modes based on total internal reflection effect in rectangular resonators of large (up to thousands wavelengths) size based on InGaAs/GaAs/AlGaAs laser heterostructures. Features of the spectral composition and spatial configurations of closed mode structures are experimentally investigated. The presence of frequency combs in the spectra was demonstrated and their correspondence to separate spatial configurations of closed modes was shown. The effect of a change in pumping and temperature on the mode composition is also considered.
Funding agency Grant number
Russian Foundation for Basic Research 18-02-00835 À
Received: 29.12.2018
Revised: 14.01.2019
Accepted: 14.01.2019
English version:
Semiconductors, 2019, Volume 53, Issue 6, Pages 828–832
DOI: https://doi.org/10.1134/S1063782619060162
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Ñlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 839–843; Semiconductors, 53:6 (2019), 828–832
Citation in format AMSBIB
\Bibitem{PodRomSha19}
\by A.~A.~Podoskin, D.~N.~Romanovich, I.~S.~Shashkin, P.~S.~Gavrina, Z.~N.~Sokolova, S.~O.~Slipchenko, N.~A.~Pikhtin
\paper Ñlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 6
\pages 839--843
\mathnet{http://mi.mathnet.ru/phts5493}
\crossref{https://doi.org/10.21883/FTP.2019.06.47739.9058a}
\elib{https://elibrary.ru/item.asp?id=39133300}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 6
\pages 828--832
\crossref{https://doi.org/10.1134/S1063782619060162}
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  • https://www.mathnet.ru/eng/phts/v53/i6/p839
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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