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This article is cited in 2 scientific papers (total in 2 papers)
Lasers
Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)
D. A. Veselov, K. R. Ayusheva, I. S. Shashkin, K. V. Bakhvalov, V. V. Vasil'eva, L. S. Vavilova, A. V. Lyutetskiy, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
Abstract:
We have studied the effect of laser cavity parameters on the light–current characteristics of lasers based on the AlGaInAs/GaInAsP/InP solid solution system that emit in the spectral range 1400–1600 nm. It has been shown that optimisation of cavity parameters (chip length and front facet reflectivity) allows one to improve heat removal from the laser, without changing other laser characteristics. An increase in the maximum output optical power of the laser by 0.5 W has been demonstrated due to cavity design optimisation.
Keywords:
semiconductor laser, saturation of the light–current characteristic, Auger recombination, laser cavity.
Received: 24.04.2015 Revised: 17.07.2015
Citation:
D. A. Veselov, K. R. Ayusheva, I. S. Shashkin, K. V. Bakhvalov, V. V. Vasil'eva, L. S. Vavilova, A. V. Lyutetskiy, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)”, Kvantovaya Elektronika, 45:10 (2015), 879–883 [Quantum Electron., 45:10 (2015), 879–883]
Linking options:
https://www.mathnet.ru/eng/qe16263 https://www.mathnet.ru/eng/qe/v45/i10/p879
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