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This article is cited in 6 scientific papers (total in 6 papers)
Lasers
Double integrated laser-thyristor
T. A. Bagaeva, M. A. Ladugina, A. A. Padalitsaa, A. A. Marmalyuka, Yu. V. Kurnyavkoa, A. V. Lobintsova, A. I. Danilova, S. M. Sapozhnikova, V. V. Krichevskiia, M. V. Zverkova, V. P. Konyaeva, V. A. Simakova, S. O. Slipchenkob, A. A. Podoskinb, N. A. Pikhtinb a IRE-Polus Research and Technology Association, Fryazino, Moscow
b Ioffe Institute, St. Petersburg
Abstract:
Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thyristor in one heterostructure makes it possible to achieve efficient operation of the laser in a pulsed regime (up to 50 W), while the use of vertical integration of two laser sections in this device additionally increases the optical output power to 90 W with all other conditions being the same.
Keywords:
semiconductor heterostructure, epitaxial integration, integrated laser-thyristor, output power.
Received: 06.08.2019
Citation:
T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, Yu. V. Kurnyavko, A. V. Lobintsov, A. I. Danilov, S. M. Sapozhnikov, V. V. Krichevskii, M. V. Zverkov, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, “Double integrated laser-thyristor”, Kvantovaya Elektronika, 49:11 (2019), 1011–1013 [Quantum Electron., 49:11 (2019), 1011–1013]
Linking options:
https://www.mathnet.ru/eng/qe17148 https://www.mathnet.ru/eng/qe/v49/i11/p1011
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