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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 5, Pages 484–489
DOI: https://doi.org/10.21883/FTP.2020.05.49266.9343 (Mi phts5234) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor physics

Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures

A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin

Ioffe Institute, St. Petersburg
Full-text PDF (239 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2020.05.49266.9343
Abstract: A lumped model of the dynamics of the controlled switching of high-Q closed-mode structures in rectangular large cavities (up to 1 $\times$ 1 mm and larger) based on AlGaAs/InGaAs/GaAs laser heterostructures is presented. The model considers the modulation of the useful power of a closed-mode structure due to controlled generation switching to an alternative closed mode. Generation-switching control between closed mode structures is implemented due to a variation in the optical loss of one structure. A variation in the optical loss occurs due to an increase in interband optical absorption due to the quantum-confined Stark effect upon the application of voltage to a laser crystal segment in the closed-mode propagation region.
Keywords: closed mode, laser heterostructure, quantum-confined Stark effect.
Funding agency Grant number
Russian Foundation for Basic Research 18-02-00835А
The authors A.A. Podoskin, D.N. Romanovich, I.S. Shashkin, P.S. Gavrina, and Z.N. Sokolova thank for support the Russian Foundation for Basic Research, project no. 18-02-00835A.
Received: 15.01.2020
Revised: 21.01.2020
Accepted: 21.01.2020
English version:
Semiconductors, 2020, Volume 54, Issue 5, Pages 581–586
DOI: https://doi.org/10.1134/S1063782620050097
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 484–489; Semiconductors, 54:5 (2020), 581–586
Citation in format AMSBIB
\Bibitem{PodRomSha20}
\by A.~A.~Podoskin, D.~N.~Romanovich, I.~S.~Shashkin, P.~S.~Gavrina, Z.~N.~Sokolova, S.~O.~Slipchenko, N.~A.~Pikhtin
\paper Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 5
\pages 484--489
\mathnet{http://mi.mathnet.ru/phts5234}
\crossref{https://doi.org/10.21883/FTP.2020.05.49266.9343}
\elib{https://elibrary.ru/item.asp?id=42906062 }
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 5
\pages 581--586
\crossref{https://doi.org/10.1134/S1063782620050097}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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