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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor physics
Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin Ioffe Institute, St. Petersburg
Abstract:
A lumped model of the dynamics of the controlled switching of high-Q closed-mode structures in rectangular large cavities (up to 1 $\times$ 1 mm and larger) based on AlGaAs/InGaAs/GaAs laser heterostructures is presented. The model considers the modulation of the useful power of a closed-mode structure due to controlled generation switching to an alternative closed mode. Generation-switching control between closed mode structures is implemented due to a variation in the optical loss of one structure. A variation in the optical loss occurs due to an increase in interband optical absorption due to the quantum-confined Stark effect upon the application of voltage to a laser crystal segment in the closed-mode propagation region.
Keywords:
closed mode, laser heterostructure, quantum-confined Stark effect.
Received: 15.01.2020 Revised: 21.01.2020 Accepted: 21.01.2020
Citation:
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 484–489; Semiconductors, 54:5 (2020), 581–586
Linking options:
https://www.mathnet.ru/eng/phts5234 https://www.mathnet.ru/eng/phts/v54/i5/p484
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