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This article is cited in 5 scientific papers (total in 5 papers)
Lasers
Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
N. A. Volkova, A. Yu. Andreeva, I. V. Yarotskayaa, Yu. L. Ryaboshtana, V. N. Svetogorova, M. A. Ladugina, A. A. Padalitsaa, A. A. Marmalyukab, S. O. Slipchenkoc, A. V. Lyutetskiyc, D. A. Veselovc, N. A. Pikhtinc a "Sigm Plyus" Ltd., Moscow
b National Engineering Physics Institute "MEPhI", Moscow
c Ioffe Institute, St. Petersburg
Abstract:
Semiconductor lasers based on AlGaInAs/InP heterostructures with a strongly asymmetric waveguide are studied. It is shown that the use of such a waveguide simultaneously with an increased quantum well energy depth provides conditions for increasing the output laser power. The semiconductor AlGaInAs/InP lasers based on a strongly asymmetric waveguide with a stripe contact width of 100 μm demonstrated an output optical power of 5 W (pump current 11.5 A) in a continuous-wave regime and 19 W (100 A) in a pulsed regime (100 ns, 1 kHz) at a wavelength of 1450 – 1500 nm at room temperature. The obtained data are compared with the output characteristics of lasers based on a symmetric waveguide.
Keywords:
semiconductor laser, heterostructure, AlGaInAs/InP, asymmetric waveguide.
Received: 11.11.2020
Citation:
N. A. Volkov, A. Yu. Andreev, I. V. Yarotskaya, Yu. L. Ryaboshtan, V. N. Svetogorov, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide”, Kvantovaya Elektronika, 51:2 (2021), 133–136 [Quantum Electron., 51:2 (2021), 133–136]
Linking options:
https://www.mathnet.ru/eng/qe17399 https://www.mathnet.ru/eng/qe/v51/i2/p133
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