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Kvantovaya Elektronika, 2020, Volume 50, Number 8, Pages 722–726 (Mi qe17302)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers, active media

Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers

Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, V. A. Kryuchkov, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin

Ioffe Institute, St. Petersburg
Full-text PDF (833 kB) Citations (1)
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Abstract: Lasers based on AlGaAs/InGaAs/GaAs heterostructures operating in the spectral range of 1.0 – 1.1 mm are investigated in order to optimise cladding layers. The effect of the thickness and composition of the cladding layers on the leakage of radiation from the laser waveguide is analysed. It is shown that for cladding thicknesses of 0.86 – 1.24 μm, it almost does not affect the output optical power. The effect of the crystal length and reflectivity of the laser mirrors on the leaky wave is demonstrated.
Keywords: laser diodes, spectral range of 1.0 – 1.1 μm, radiation leakage.
Funding agency Grant number
Russian Science Foundation 19-79-30072
Received: 10.03.2020
English version:
Quantum Electronics, 2020, Volume 50, Issue 8, Pages 722–726
DOI: https://doi.org/10.1070/QEL17323
Bibliographic databases:
Document Type: Article
Language: Russian


Citation: Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, V. A. Kryuchkov, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, “Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers”, Kvantovaya Elektronika, 50:8 (2020), 722–726 [Quantum Electron., 50:8 (2020), 722–726]
Linking options:
  • https://www.mathnet.ru/eng/qe17302
  • https://www.mathnet.ru/eng/qe/v50/i8/p722
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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