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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 4, Pages 408–413
DOI: https://doi.org/10.21883/FTP.2020.04.49149.9333 (Mi phts5251) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor physics

Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide

I. S. Shashkin, A. Yu. Leshko, D. N. Nikolaev, V. V. Shamakhov, N. A. Rudova, K. V. Bakhvalov, A. V. Lyutetskiy, V. A. Kapitonov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev

Ioffe Institute, St. Petersburg
Full-text PDF (632 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2020.04.49149.9333
Abstract: The emission characteristics of narrow mesa-stripe (5.5 $\mu$m) lasers based on asymmetric AlGaAs/GaAs heterostructures are studied. It is shown that the maximum optical power achieved in the continuous-wave (CW) operation mode is limited by heating and reaches a value of 1695 mW at a current of 2350 mA at +25$^\circ$C, with the maximum efficiency reaching 54.8%. Reducing the working temperature to -8$^\circ$C makes it possible to raise the maximum low-mode CW power to 2 W. A peak power of 2930 mW is obtained under pumping with current pulses (width 240 ns, amplitude 4230 mA). It is shown that the power profile has in the pulsed mode an “optical dip” region in which low-efficiency lasing occurs with the generation of a train of subnanosecond pulses.
Keywords: single-mode laser, AlGaAs/GaAs, dip in optical power profile, higher-order modes, peak optical power.
Funding agency Grant number
Russian Science Foundation 19-79-30072
The study was supported by the Russian Science Foundation (project no. 19-79-30072).
Received: 12.12.2019
Revised: 23.12.2019
Accepted: 23.12.2019
Document Type: Article
Language: Russian
Citation: I. S. Shashkin, A. Yu. Leshko, D. N. Nikolaev, V. V. Shamakhov, N. A. Rudova, K. V. Bakhvalov, A. V. Lyutetskiy, V. A. Kapitonov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 408–413
Citation in format AMSBIB
\Bibitem{ShaLesNik20}
\by I.~S.~Shashkin, A.~Yu.~Leshko, D.~N.~Nikolaev, V.~V.~Shamakhov, N.~A.~Rudova, K.~V.~Bakhvalov, A.~V.~Lyutetskiy, V.~A.~Kapitonov, V.~V.~Zolotarev, S.~O.~Slipchenko, N.~A.~Pikhtin, P.~S.~Kop'ev
\paper Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 4
\pages 408--413
\mathnet{http://mi.mathnet.ru/phts5251}
\crossref{https://doi.org/10.21883/FTP.2020.04.49149.9333}
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    • This publication is cited in the following 1 articles:
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