A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides”, Kvantovaya Elektronika, 47:3 (2017), 272–274 [Quantum Electron., 47:3 (2017), 272

Kvantovaya Elektronika

RUS ENG

JOURNALS PEOPLE ORGANISATIONS CONFERENCES SEMINARS VIDEO LIBRARY PACKAGE AMSBIB

JavaScript is disabled in your browser. Please switch it on to enable full functionality of the website

	General information
	Latest issue
	Archive
	Impact factor
	Submit a manuscript

	Search papers
	Search references

	RSS
	Latest issue
	Current issues
	Archive issues
	What is RSS

Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
	Find

Personal entry:
Login:
Password:
	Save password
	Enter
	Forgotten password?
	Register

Kvantovaya Elektronika, 2017, Volume 47, Number 3, Pages 272–274 (Mi qe16567)

This article is cited in 25 scientific papers (total in 25 papers)

Lasers

Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

A. A. Marmalyuk^ab, Yu. L. Ryaboshtan^a, P. V. Gorlachuk^a, M. A. Ladugin^a, A. A. Padalitsa^a, S. O. Slipchenko^c, A. V. Lyutetskiy^c, D. A. Veselov^c, N. A. Pikhtin^c

^a "Sigm Plyus" Ltd., Moscow
^b Moscow Engineering Physics Institute (National Nuclear Research University)
^c Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg

Full-text PDF (490 kB) Citations (25)

References:

PDF

HTML

Abstract: Laser diodes based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Laser diodes with a stripe contact 100 μm wide demonstrate at room temperature an output optical power exceeding 4 W in a continuouswave mode and exceeding 20 W in a pulsed mode.

Keywords: AlGaInAs/InP heterostructure, MOVPE, laser diode, eye-safe spectral region.

Funding agency	Grant number
Ministry of Education and Science of the Russian Federation

Received: 30.01.2017

English version:
Quantum Electronics, 2017, Volume 47, Issue 3, Pages 272–274
DOI: https://doi.org/10.1070/QEL16294

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides”, Kvantovaya Elektronika, 47:3 (2017), 272–274 [Quantum Electron., 47:3 (2017), 272–274]

Linking options:

https://www.mathnet.ru/eng/qe16567

https://www.mathnet.ru/eng/qe/v47/i3/p272

This publication is cited in the following 25 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

Что такое QR-код?

Registration to the website

Logotypes