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This article is cited in 25 scientific papers (total in 25 papers)
Lasers
Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides
A. A. Marmalyukab, Yu. L. Ryaboshtana, P. V. Gorlachuka, M. A. Ladugina, A. A. Padalitsaa, S. O. Slipchenkoc, A. V. Lyutetskiyc, D. A. Veselovc, N. A. Pikhtinc a "Sigm Plyus" Ltd., Moscow
b Moscow Engineering Physics Institute (National Nuclear Research University)
c Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
Abstract:
Laser diodes based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Laser diodes with a stripe contact 100 μm wide demonstrate at room temperature an output optical power exceeding 4 W in a continuouswave mode and exceeding 20 W in a pulsed mode.
Keywords:
AlGaInAs/InP heterostructure, MOVPE, laser diode, eye-safe spectral region.
Received: 30.01.2017
Citation:
A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides”, Kvantovaya Elektronika, 47:3 (2017), 272–274 [Quantum Electron., 47:3 (2017), 272–274]
Linking options:
https://www.mathnet.ru/eng/qe16567 https://www.mathnet.ru/eng/qe/v47/i3/p272
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Abstract page: | 450 | Full-text PDF : | 151 | References: | 51 | First page: | 33 |
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