Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 4, Pages 344–348
DOI: https://doi.org/10.21883/FTP.2021.04.50736.9565 (Mi phts5055) 		 
This article is cited in 6 scientific papers (total in 6 papers)

Semiconductor physics

High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure

I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, N. V. Voronkova, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev

Ioffe Institute, St. Petersburg, Russia
Full-text PDF (232 kB) Citations (6)
DOI: https://doi.org/10.21883/FTP.2021.04.50736.9565
Abstract: Semiconductor lasers with a 10 $\mu$m wide lateral waveguide of a mesa-stripe design were developed and their light characteristics were studied. Lasers with a 4.6mm long cavity is shown to have a continuous wave (CW) optical power of 2.6W at a heatsink temperature of 25$^\circ$C. Lasers with a shorter cavity ($<$ 3mm) showed a lower value of the maximum optical power due to a thermal rollover of the light-current curve.
Keywords: diode lasers, high power, ridge-waveguide lasers, lateral brightness, lateral modes, quantum well lasers, thermal rollover.
Funding agency Grant number
Russian Science Foundation 19-79-30072
This study was supported by the Russian Science Foundation (project no. 19-79-30072).
Received: 01.12.2020
Revised: 10.12.2020
Accepted: 10.12.2020
English version:
Semiconductors, 2021, Volume 55, Issue 4, Pages 455–459
DOI: https://doi.org/10.1134/S1063782621040163
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, N. V. Voronkova, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 344–348; Semiconductors, 55:4 (2021), 455–459
Citation in format AMSBIB
\Bibitem{ShaLesSha21}
\by I.~S.~Shashkin, A.~Yu.~Leshko, V.~V.~Shamakhov, N.~V.~Voronkova, V.~A.~Kapitonov, K.~V.~Bakhvalov, S.~O.~Slipchenko, N.~A.~Pikhtin, P.~S.~Kop'ev
\paper High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 4
\pages 344--348
\mathnet{http://mi.mathnet.ru/phts5055}
\crossref{https://doi.org/10.21883/FTP.2021.04.50736.9565}
\elib{https://elibrary.ru/item.asp?id=46474713}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 4
\pages 455--459
\crossref{https://doi.org/10.1134/S1063782621040163}
Linking options:
  • https://www.mathnet.ru/eng/phts5055
  • https://www.mathnet.ru/eng/phts/v55/i4/p344
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:89
    Full-text PDF :46
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024