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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
S. A. Kukushkin, Sh. Sh. Sharofidinov, A. V. Osipov, A. S. Grashchenko, A. V. Kandakov, E. V. Osipova, K. P. Kotlyar, E. V. Ubyivovk, “Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates”, Fizika Tverdogo Tela, 63:3 (2021), 363–369 ; Phys. Solid State, 63:3 (2021), 442–448 |
6
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2. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Registration of terahertz radiation with silicon carbide nanostructures”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1195–1202 |
2
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3. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Terahertz emission from silicon carbide nanostructures”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1027–1033 |
3
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4. |
I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko, A. V. Osipov, I. P. Sotnikov, A. N. Terpitsky, G. E. Cirlin, “Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 621–624 ; Semiconductors, 55:8 (2021), 678–681 |
2
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5. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, V. V. Romanov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 103–111 ; Semiconductors, 55:2 (2021), 137–145 |
12
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6. |
A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, A. V. Redkov, “Mechanical properties of a composite SiC coating on graphite obtained by the atomic substitution method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 7–10 |
7. |
S. A. Kukushkin, A. V. Osipov, “The thermodynamic stability of In$_{x}$Ga$_{1-x}$N solid solutions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021), 51–54 |
1
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8. |
L. K. Markov, S. A. Kukushkin, I. P. Smirnova, A. S. Pavluchenko, A. S. Grashchenko, A. V. Osipov, G. V. Svyatets, A. E. Nikolaev, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, “A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 3–6 |
3
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9. |
N. A. Cherkashin, A. V. Sakharov, A. E. Nikolaev, V. V. Lundin, S. O. Usov, V. M. Ustinov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, A. F. Tsatsul'nikov, “Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 15–18 ; Tech. Phys. Lett., 47:10 (2021), 753–756 |
6
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10. |
A. A. Koryakin, Yu. A. Eremeev, A. V. Osipov, S. A. Kukushkin, “The influence of the porosity of silicon layer on the elastic properties of hybrid SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021), 25–28 ; Tech. Phys. Lett., 47:2, 126–129 |
4
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2020 |
11. |
S. A. Kukushkin, A. V. Osipov, “The optical properties, energy band structure, and interfacial conductance of a 3$C$-SiC(111)/Si(111) heterostructure grown by the method of atomic substitution”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 3–5 ; Tech. Phys. Lett., 46:11 (2020), 1103–1106 |
9
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12. |
S. A. Kukushkin, A. V. Osipov, A. I. Romanychev, I. A. Kasatkin, A. S. Loshachenko, “Low-temperature growth of the CdS cubic phase by atomic-layer deposition on SiC/Si hybrid substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 3–6 ; Tech. Phys. Lett., 46:11 (2020), 1049–1052 |
3
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13. |
A. S. Grashchenko, A. S. Kukushkin, A. V. Osipov, “Coating of nanostructured profiled Si surface with a SiC layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:20 (2020), 19–22 ; Tech. Phys. Lett., 46:10 (2020), 1012–1015 |
1
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14. |
D. D. Avrov, A. N. Gorlyak, A. O. Lebedev, V. V. Luchinin, A. V. Markov, A. V. Osipov, M. F. Panov, S. A. Kukushkin, “Comparative ellipsometric analysis of silicon carbide polytypes 4$H$, 15$R$, and 6$H$ produced by a modified Lely method in the same growth process”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 28–31 ; Tech. Phys. Lett., 46:10 (2020), 968–971 |
4
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15. |
A. V. Osipov, A. S. Grashchenko, A. N. Gorlyak, A. O. Lebedev, V. V. Luchinin, A. V. Markov, M. F. Panov, S. A. Kukushkin, “Investigation of the hardness and Young's modulus in thin near-surface layers of silicon carbide from the Si- and C-faces by nanoindentation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 36–38 ; Tech. Phys. Lett., 46:8 (2020), 763–766 |
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16. |
S. A. Kukushkin, A. V. Osipov, A. V. Redkov, Sh. Sh. Sharofidinov, “Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 22–25 ; Tech. Phys. Lett., 46:6 (2020), 539–542 |
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2019 |
17. |
S. A. Kukushkin, A. V. Osipov, “Mechanism of diffusion of carbon and silicon monooxides in a cubic silicon carbide crystal”, Fizika Tverdogo Tela, 61:12 (2019), 2334–2337 ; Phys. Solid State, 61:12 (2019), 2338–2341 |
1
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18. |
A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, “Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution”, Fizika Tverdogo Tela, 61:12 (2019), 2313–2315 ; Phys. Solid State, 61:12 (2019), 2310–2312 |
2
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19. |
A. M. Mizerov, S. A. Kukushkin, Sh. Sh. Sharofidinov, A. V. Osipov, S. N. Timoshnev, K. Yu. Shubina, T. N. Berezovskaya, D. V. Mokhov, A. D. Bouravlev, “Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates”, Fizika Tverdogo Tela, 61:12 (2019), 2289–2293 ; Phys. Solid State, 61:12 (2019), 2277–2281 |
4
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20. |
S. A. Kukushkin, A. V. Osipov, “Pathways of transitions between polytypes in silicon carbide”, Fizika Tverdogo Tela, 61:8 (2019), 1443–1447 ; Phys. Solid State, 61:8 (2019), 1389–1393 |
21. |
S. A. Kukushkin, A. V. Osipov, N. A. Feoktistov, “Two-stage conversion of silicon to nanostructured carbon by the method of coordinated atomic substitution”, Fizika Tverdogo Tela, 61:3 (2019), 587–593 ; Phys. Solid State, 61:3 (2019), 456–463 |
5
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22. |
A. V. Redkov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, K. P. Kotlyar, A. I. Lihachev, A. V. Nashchekin, I. P. Soshnikov, “Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution”, Fizika Tverdogo Tela, 61:3 (2019), 433–440 ; Phys. Solid State, 61:3 (2019), 299–306 |
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23. |
S. A. Kukushkin, A. V. Osipov, “Microscopic description of the mechanism of transition between the 2$H$ and 4$H$ polytypes of silicon carbide”, Fizika Tverdogo Tela, 61:3 (2019), 422–425 ; Phys. Solid State, 61:3 (2019), 288–291 |
4
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24. |
S. A. Kukushkin, A. M. Mizerov, A. S. Grashchenko, A. V. Osipov, E. V. Nikitina, S. N. Timoshnev, A. D. Bouravlev, M. S. Sobolev, “Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 190–198 ; Semiconductors, 53:2 (2019), 180–187 |
4
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25. |
V. V. Antipov, S. A. Kukushkin, A. V. Osipov, “Epitaxial growth of zinc sulfide by atomic layer deposition on SiC/Si hybrid substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 11–14 ; Tech. Phys. Lett., 45:11 (2019), 1075–1077 |
2
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26. |
Sh. Sh. Sharofidinov, S. A. Kukushkin, A. V. Redkov, A. S. Grashchenko, A. V. Osipov, “Growing III–V semiconductor heterostructures on SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 24–27 ; Tech. Phys. Lett., 45:7 (2019), 711–713 |
14
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27. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, A. V. Osipov, S. N. Timoshnev, “A new type of carbon nanostructure on a vicinal SiŃ(111)-8$^\circ$ surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 17–20 ; Tech. Phys. Lett., 45:3 (2019), 201–204 |
8
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2018 |
28. |
Yu. È. Kitaev, S. A. Kukushkin, A. V. Osipov, A. V. Redkov, “A new trigonal (rhombohedral) sic phase: ab initio calculations, a symmetry analysis and the Raman spectra”, Fizika Tverdogo Tela, 60:10 (2018), 2022–2027 ; Phys. Solid State, 60:10 (2018), 2066–2071 |
4
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29. |
S. A. Kukushkin, A. V. Osipov, “Mechanism of formation of carbon–vacancy structures in silicon carbide during its growth by atomic substitution”, Fizika Tverdogo Tela, 60:9 (2018), 1841–1846 ; Phys. Solid State, 60:9 (2018), 1891–1896 |
10
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30. |
A. S. Grashchenko, S. A. Kukushkin, V. I. Nikolaev, A. V. Osipov, E. V. Osipova, I. P. Soshnikov, “Study of the anisotropic elastoplastic properties of $\beta$-Ga$_{2}$O$_{3}$ films synthesized on SiC/Si substrates”, Fizika Tverdogo Tela, 60:5 (2018), 851–856 ; Phys. Solid State, 60:5 (2018), 852–857 |
24
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31. |
V. V. Antipov, S. A. Kukushkin, A. V. Osipov, V. P. Rubets, “Epitaxial growth of cadmium selenide films on silicon with a silicon carbide buffer layer”, Fizika Tverdogo Tela, 60:3 (2018), 499–504 ; Phys. Solid State, 60:3 (2018), 504–509 |
6
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32. |
I. P. Kalinkin, S. A. Kukushkin, A. V. Osipov, “Effect of chemical treatment of a silicon surface on the quality and structure of silicon-carbide epitaxial films synthesized by atom substitution”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 656–663 ; Semiconductors, 52:6 (2018), 802–808 |
18
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33. |
R. R. Reznik, K. P. Kotlyar, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 522 ; Semiconductors, 52:5 (2018), 651–653 |
2
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2017 |
34. |
S. A. Grudinkin, S. A. Kukushkin, A. V. Osipov, N. A. Feoktistov, “IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide”, Fizika Tverdogo Tela, 59:12 (2017), 2403–2408 ; Phys. Solid State, 59:12 (2017), 2430–2435 |
8
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35. |
S. A. Kukushkin, A. V. Osipov, “A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon”, Fizika Tverdogo Tela, 59:6 (2017), 1214–1217 ; Phys. Solid State, 59:6 (2017), 1238–1241 |
3
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36. |
S. A. Kukushkin, K. Kh. Nussupov, A. V. Osipov, N. B. Beisenkhanov, D. I. Bakranova, “X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method”, Fizika Tverdogo Tela, 59:5 (2017), 986–998 ; Phys. Solid State, 59:5 (2017), 1014–1026 |
10
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37. |
V. K. Egorov, E. V. Egorov, S. A. Kukushkin, A. V. Osipov, “Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide”, Fizika Tverdogo Tela, 59:4 (2017), 755–761 ; Phys. Solid State, 59:4 (2017), 773–779 |
3
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38. |
S. A. Kukushkin, A. V. Osipov, V. N. Bessolov, E. V. Konenkova, V. N. Panteleev, “Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates”, Fizika Tverdogo Tela, 59:4 (2017), 660–667 ; Phys. Solid State, 59:4 (2017), 674–681 |
4
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39. |
V. V. Antipov, S. A. Kukushkin, A. V. Osipov, “Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer”, Fizika Tverdogo Tela, 59:2 (2017), 385–388 ; Phys. Solid State, 59:2 (2017), 399–402 |
5
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40. |
Yu. È. Kitaev, S. A. Kukushkin, A. V. Osipov, “Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide”, Fizika Tverdogo Tela, 59:1 (2017), 30–35 ; Phys. Solid State, 59:1 (2017), 28–33 |
6
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41. |
R. R. Reznik, K. P. Kotlyar, I. V. Shtrom, I. P. Sotnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1525–1529 ; Semiconductors, 51:11 (2017), 1472–1476 |
1
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42. |
A. S. Grashchenko, N. A. Feoktistov, A. V. Osipov, E. V. Kalinina, S. A. Kukushkin, “Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 651–658 ; Semiconductors, 51:5 (2017), 621–627 |
10
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43. |
S. A. Kukushkin, A. V. Osipov, A. V. Redkov, “Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 414–420 ; Semiconductors, 51:3 (2017), 396–401 |
12
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44. |
S. A. Kukushkin, A. V. Osipov, “The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:13 (2017), 81–88 ; Tech. Phys. Lett., 43:7 (2017), 631–634 |
15
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2016 |
45. |
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, E. V. Nikitina, G. E. Cirlin, “Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy”, Fizika Tverdogo Tela, 58:10 (2016), 1886–1889 ; Phys. Solid State, 58:10 (2016), 1952–1955 |
10
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46. |
S. A. Kukushkin, V. I. Nikolaev, A. V. Osipov, E. V. Osipova, A. I. Pechnikov, N. A. Feoktistov, “Epitaxial gallium oxide on a SiC/Si substrate”, Fizika Tverdogo Tela, 58:9 (2016), 1812–1817 ; Phys. Solid State, 58:9 (2016), 1876–1881 |
22
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47. |
S. A. Kukushkin, A. V. Osipov, A. I. Romanychev, “Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates”, Fizika Tverdogo Tela, 58:7 (2016), 1398–1402 ; Phys. Solid State, 58:7 (2016), 1448–1452 |
19
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48. |
S. A. Kukushkin, A. V. Osipov, R. S. Telyatnik, “Elastic interaction of point defects in cubic and hexagonal crystals”, Fizika Tverdogo Tela, 58:5 (2016), 941–949 ; Phys. Solid State, 58:5 (2016), 971–980 |
12
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49. |
S. A. Kukushkin, A. V. Osipov, O. N. Sergeeva, D. A. Kiselev, A. A. Bogomolov, A. V. Solnyshkin, E. Yu. Kaptelov, S. V. Senkevich, I. P. Pronin, “Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate”, Fizika Tverdogo Tela, 58:5 (2016), 937–940 ; Phys. Solid State, 58:5 (2016), 967–970 |
14
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50. |
S. A. Kukushkin, A. V. Osipov, “Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon”, Fizika Tverdogo Tela, 58:4 (2016), 725–729 ; Phys. Solid State, 58:4 (2016), 747–751 |
13
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51. |
V. V. Antipov, S. A. Kukushkin, A. V. Osipov, “Epitaxial growth of cadmium sulfide films on silicon”, Fizika Tverdogo Tela, 58:3 (2016), 612–615 ; Phys. Solid State, 58:3 (2016), 629–632 |
9
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52. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, B. V. Senkovskiy, “The C 1$s$ core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4$^\circ$ layer and Cs/SiC/Si(111)-4$^\circ$ interface”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1348–1352 ; Semiconductors, 50:10 (2016), 1327–1332 |
3
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53. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, S. N. Timoshnev, “Photoemission studies of the vicinal SiC(100) 4$^\circ$ surface and the Cs/SiC(100) 4$^\circ$ interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016), 51–57 ; Tech. Phys. Lett., 42:12 (2016), 1145–1148 |
3
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54. |
A. V. Redkov, A. V. Osipov, S. A. Kukushkin, “Molecular dynamics simulation of the indentation of nanoscale films on a substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 64–72 ; Tech. Phys. Lett., 42:6 (2016), 639–643 |
5
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55. |
S. A. Kukushkin, A. V. Osipov, “Determining polytype composition of silicon carbide films by UV ellipsometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:4 (2016), 16–22 ; Tech. Phys. Lett., 42:2 (2016), 175–178 |
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1998 |
56. |
S. A. Kukushkin, A. V. Osipov, “Thin-film condensation processes”, UFN, 168:10 (1998), 1083–1116 ; Phys. Usp., 41:10 (1998), 983–1014 |
238
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1992 |
57. |
I. A. Ovid'ko, A. V. Osipov, “Disclination splitting and crystal–glass transformation under mechanical fusing”, Fizika Tverdogo Tela, 34:1 (1992), 288–292 |
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