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This article is cited in 12 scientific papers (total in 12 papers)
Electronic properties of semiconductors
Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces
N. T. Bagraevab, S. A. Kukushkina, A. V. Osipova, V. V. Romanovc, L. E. Klyachkinb, A. M. Malyarenkob, V. S. Khromovab a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia
c Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
Abstract:
A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility in samples of single-crystal SiC thin films grown on the (100), (110), and (111) surfaces of a Si single crystal by the method of the self-consistent substitution of atoms due to the chemical reaction of silicon with carbon-monoxide (CO) gas. As a result of investigations in SiC structures grown on Si(110) and Si(111), the appearance of two quantum effects is found in weak magnetic fields at room temperature. These effects are, first, the formation of hysteresis of the static magnetic susceptibility and, second, the generation of Aharonov–Bohm oscillations in the field dependences of the static magnetic susceptibility. The first effect is associated with the Meissner–Ochsenfeld effect and the second effect, with the presence of microdefects in the form of nanotubes and micropores formed during the synthesis of structures in them under the SiC layer. In the SiC structures grown on Si(100), these effects are not detected, which is related to a different mechanism of SiC formation on the Si(100) surface.
Keywords:
silicon carbide on silicon, dilatation dipoles, magnetic susceptibility, diamagnetism, Aharonov–Bohm effect.
Received: 15.10.2020 Revised: 24.10.2020 Accepted: 24.10.2020
Citation:
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, V. V. Romanov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 103–111; Semiconductors, 55:2 (2021), 137–145
Linking options:
https://www.mathnet.ru/eng/phts5073 https://www.mathnet.ru/eng/phts/v55/i2/p103
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