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Fizika Tverdogo Tela, 2016, Volume 58, Issue 10, Pages 1886–1889 (Mi ftt9806)  
This article is cited in 11 scientific papers (total in 11 papers)

Semiconductors

Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

R. R. Reznikabc, K. P. Kotlyarad, I. V. Ilkivab, I. P. Soshnikovade, S. A. Kukushkinacf, A. V. Osipovafc, E. V. Nikitinaa, G. E. Cirlincga

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Ioffe Institute, St. Petersburg
e Saint Petersburg Electrotechnical University "LETI"
f Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
g Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
Full-text PDF (689 kB) Citations (11)
Abstract: The potential to grow filamentary GaN nanocrystals by molecular beam epitaxy on a silicon substrate with a nanosized buffer layer of silicon carbide has been demonstrated. Morphological and optical properties of the obtained system have been studied. It has been shown that the intensity of the photoluminescence spectrum peak of such structures is higher than that of the best filamentary GaN nanocrystals without the buffer silicon carbide layer by a factor of more than two.
Received: 08.04.2016
English version:
Physics of the Solid State, 2016, Volume 58, Issue 10, Pages 1952–1955
DOI: https://doi.org/10.1134/S1063783416100292
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, E. V. Nikitina, G. E. Cirlin, “Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy”, Fizika Tverdogo Tela, 58:10 (2016), 1886–1889; Phys. Solid State, 58:10 (2016), 1952–1955
Citation in format AMSBIB
\Bibitem{RezKotIlk16}
\by R.~R.~Reznik, K.~P.~Kotlyar, I.~V.~Ilkiv, I.~P.~Soshnikov, S.~A.~Kukushkin, A.~V.~Osipov, E.~V.~Nikitina, G.~E.~Cirlin
\paper Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy
\jour Fizika Tverdogo Tela
\yr 2016
\vol 58
\issue 10
\pages 1886--1889
\mathnet{http://mi.mathnet.ru/ftt9806}
\elib{https://elibrary.ru/item.asp?id=27368767}
\transl
\jour Phys. Solid State
\yr 2016
\vol 58
\issue 10
\pages 1952--1955
\crossref{https://doi.org/10.1134/S1063783416100292}
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  • https://www.mathnet.ru/eng/ftt/v58/i10/p1886
    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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