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This article is cited in 19 scientific papers (total in 19 papers)
Surface physics, thin films
Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates
S. A. Kukushkinabc, A. V. Osipovab, A. I. Romanychevd a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c St. Petersburg Polytechnic University
d Saint Petersburg State University
Abstract:
For the first time, zinc oxide epitaxial films on silicon were grown by the method of atomic layer deposition at a temperature $T$ = 250$^\circ$C. In order to avoid a chemical reaction between silicon and zinc oxide (at the growth temperature, the rate constant of the reaction is of the order of 10$^{22}$), a high-quality silicon carbide buffer layer with a thickness of $\sim$50 nm was preliminarily synthesized by the chemical substitution of atoms on the silicon surface. The zinc oxide films were grown on $n$- and $p$-type Si(100) wafers. The ellipsometric, Raman, electron diffraction, and trace element analyses showed that the ZnO films are epitaxial.
Received: 08.12.2015
Citation:
S. A. Kukushkin, A. V. Osipov, A. I. Romanychev, “Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates”, Fizika Tverdogo Tela, 58:7 (2016), 1398–1402; Phys. Solid State, 58:7 (2016), 1448–1452
Linking options:
https://www.mathnet.ru/eng/ftt9930 https://www.mathnet.ru/eng/ftt/v58/i7/p1398
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