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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Registration of terahertz radiation with silicon carbide nanostructures
N. T. Bagraevab, S. A. Kukushkina, A. V. Osipova, L. E. Klyachkinb, A. M. Malyarenkob, V. S. Khromovab a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
Abstract:
The response to external terahertz (THz) radiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the frameworks of proposed model based on the quantum Faraday effect the incident radiation results in the appearance of a generated current in the edge channels with a change in the number of magnetic flux quanta and in the appearance of features in the kinetic dependence of the longitudinal voltage. The generation of intrinsic terahertz radiation inside the silicon carbide nanostructures is also revealed by the electrically-detected electron paramagnetic resonance (EDEPR) measured the longitudinal voltage as a function of the magnetic field value.
Keywords:
silicon carbide on silicon, terahertz radiation, nanostructure, electrically-detected EPR, quantum Faraday effect.
Received: 28.07.2021 Revised: 02.08.2021 Accepted: 02.08.2021
Citation:
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Registration of terahertz radiation with silicon carbide nanostructures”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1195–1202
Linking options:
https://www.mathnet.ru/eng/phts4916 https://www.mathnet.ru/eng/phts/v55/i12/p1195
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