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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductors
Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide
Yu. È. Kitaevab, S. A. Kukushkinbcd, A. V. Osipovbc a Ioffe Institute, St. Petersburg
b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Peter the Great St. Petersburg Polytechnic University
Abstract:
A symmetry analysis of the crystal structure and the phonon spectrum during continuous topochemical conversion of silicon into silicon carbide has been carried out. The transformation of the symmetry of phonons at high-symmetry points of the Brillouin zone upon the transition from the initial cubic structure of silicon (diamond) through an intermediate cubic structure of silicon carbide to the trigonal structure of SiC has been determined. The selection rules for the infrared and Raman spectra of all the three phases under investigation have been established.
Received: 29.06.2016
Citation:
Yu. È. Kitaev, S. A. Kukushkin, A. V. Osipov, “Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide”, Fizika Tverdogo Tela, 59:1 (2017), 30–35; Phys. Solid State, 59:1 (2017), 28–33
Linking options:
https://www.mathnet.ru/eng/ftt9702 https://www.mathnet.ru/eng/ftt/v59/i1/p30
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Abstract page: | 51 | Full-text PDF : | 8 |
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