S. A. Kukushkin, A. V. Osipov, O. N. Sergeeva, D. A. Kiselev, A. A. Bogomolov, A. V. Solnyshkin, E. Yu. Kaptelov, S. V. Senkevich, I. P. Pronin, “Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate”, Fizika Tverdogo Tela, 58:5 (2016), 937–940; Phys. Solid State, 58:5 (2016), 967

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Fizika Tverdogo Tela, 2016, Volume 58, Issue 5, Pages 937–940 (Mi ftt9983)

This article is cited in 15 scientific papers (total in 15 papers)

Ferroelectricity

Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

S. A. Kukushkin^abc, A. V. Osipov^ab, O. N. Sergeeva^d, D. A. Kiselev^e, A. A. Bogomolov^d, A. V. Solnyshkin^d, E. Yu. Kaptelov^f, S. V. Senkevich^af, I. P. Pronin^f

^a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c Peter the Great St. Petersburg Polytechnic University
^d Tver State University
^e National University of Science and Technology «MISIS», Moscow
^f Ioffe Institute, St. Petersburg

Full-text PDF (582 kB) Citations (15)

Abstract: This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride–hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

Keywords: Molecular Beam Epitaxy, Polarization Vector, Polar Axis, Electric Response, Aluminum Nitride.

Received: 30.10.2015

English version:
Physics of the Solid State, 2016, Volume 58, Issue 5, Pages 967–970
DOI: https://doi.org/10.1134/S1063783416050139

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: S. A. Kukushkin, A. V. Osipov, O. N. Sergeeva, D. A. Kiselev, A. A. Bogomolov, A. V. Solnyshkin, E. Yu. Kaptelov, S. V. Senkevich, I. P. Pronin, “Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate”, Fizika Tverdogo Tela, 58:5 (2016), 937–940; Phys. Solid State, 58:5 (2016), 967–970

Citation in format AMSBIB

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\by S.~A.~Kukushkin, A.~V.~Osipov, O.~N.~Sergeeva, D.~A.~Kiselev, A.~A.~Bogomolov, A.~V.~Solnyshkin, E.~Yu.~Kaptelov, S.~V.~Senkevich, I.~P.~Pronin

\paper Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

\jour Fizika Tverdogo Tela

\yr 2016

\vol 58

\issue 5

\pages 937--940

\mathnet{http://mi.mathnet.ru/ftt9983}

\elib{https://elibrary.ru/item.asp?id=27368616}

\transl

\jour Phys. Solid State

\yr 2016

\vol 58

\issue 5

\pages 967--970

\crossref{https://doi.org/10.1134/S1063783416050139}

Linking options:

https://www.mathnet.ru/eng/ftt9983

https://www.mathnet.ru/eng/ftt/v58/i5/p937

This publication is cited in the following 15 articles:

Wusi Zhang, Feijie Chen, Difei Xue, Chang Liu, Kai Peng, Chenlong Chen, Peiwen Lv, “Wafer-scale Aluminium Nitride Nanostructures for Solar-blind Ultra-violet Detection”, Thin Solid Films, 2025, 140619
İzel PERKİTEL, İsmail ALTUNTAS, İlkay DEMİR, “The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN”, Gazi University Journal of Science, 35:1 (2022), 281
O. A. Shustova, O. N. Sergeeva, A. V. Solnyshkin, I. T. Zezianov, E. Yu. Kaptelov, I. P. Pronin, Sh. Sh. Sharofudinov, S. A. Kukushkin, “Dielectric and pyroelectric properties of AlN single-crystal layers grown by chloride-hydride epitaxy”, Ferroelectrics, 591:1 (2022), 121
Sergey Kukushkin, Andrey Osipov, Alexey Redkov, Advanced Structured Materials, 164, Mechanics and Control of Solids and Structures, 2022, 335
Badis Riah, Julien Camus, Abdelhak Ayad, Mohammad Rammal, Raouia Zernadji, Nadjet Rouag, Mohamed Abdou Djouadi, “Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer”, Coatings, 11:9 (2021), 1063
G. A. Gavrilov, K. L. Muratikov, E. A. Panyutin, G. Yu. Sotnikova, Sh. Sh. Sharofidinov, “Specific features of the pyroelectric effect in epitaxial aluminum nitride layers obtained on Si substrates”, Tech. Phys. Lett., 46:1 (2020), 16–18
E. A. Panyutin, Sh. Sh. Sharofidinov, T. A. Orlova, S. A. Snytkina, A. A. Lebedev, “Biplanar epitaxial AlN/SiC/ $(n,p)$ SiC structures for high-temperature functional electronic devices”, Tech. Phys., 65:3 (2020), 428–433
Quantum Electron., 49:11 (2019), 1078–1082
O. N. Sergeeva, A. V. Solnyshkin, D. A. Kiselev, T. S. Ilina, S. A. Kukushkin, Sh. Sh. Sharofidinov, E. Yu. Kaptelov, I. P. Pronin, “Influence of orientation of a silicon substrate with a buffer silicon carbide layer on dielectric and polar properties of aluminum nitride films”, Phys. Solid State, 61:12 (2019), 2386–2391
Surender P. Gaur, Kamaljit Rangra, Dinesh Kumar, “MEMS AlN pyroelectric infrared sensor with medium to long wave IR absorber”, Sensors and Actuators A: Physical, 300 (2019), 111660
A. V. Fimin, S. A. Gurin, E. A. Pecherskaya, P. E. Golubkov, G. V. Kozlov, K. Y. Kraynova, “Sensitive elements of microelectronic sensors of fast variable and static pressure”, J. Phys.: Conf. Ser., 1410:1 (2019), 012230
O. N. Sergeeva, A. V. Solnyshkin, S. A. Kukushkin, A. V. Osipov, Sh. Sharofidinov, E. Yu. Kaptelov, S. V. Senkevich, I. P. Pronin, “New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric Properties”, Ferroelectrics, 544:1 (2019), 33
Liegen Huang, Yuan Li, Wenliang Wang, Xiaochan Li, Yulin zheng, Haiyan Wang, Zichen Zhang, Guoqiang Li, “Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface”, Applied Surface Science, 435 (2018), 163
G. A. Gavrilov, A. F. Kapralov, K. L. Muratikov, E. A. Panyutin, A. V. Sotnikov, G. Yu. Sotnikova, Sh. Sh. Sharofidinov, “Studying the pyroelectric effect in AlN epilayers”, Tech. Phys. Lett., 44:8 (2018), 709–712
P. N. Ostapchuk, O. G. Trotsenko, “Elastic interaction of point defects with an edge dislocation loop within the Green's function formalism”, Phys. Solid State, 58:9 (2016), 1810–1818

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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