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This article is cited in 14 scientific papers (total in 14 papers)
Ferroelectricity
Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate
S. A. Kukushkinabc, A. V. Osipovab, O. N. Sergeevad, D. A. Kiseleve, A. A. Bogomolovd, A. V. Solnyshkind, E. Yu. Kaptelovf, S. V. Senkevichaf, I. P. Proninf a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Peter the Great St. Petersburg Polytechnic University
d Tver State University
e National University of Science and Technology «MISIS», Moscow
f Ioffe Institute, St. Petersburg
Abstract:
This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride–hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.
Keywords:
Molecular Beam Epitaxy, Polarization Vector, Polar Axis, Electric Response, Aluminum Nitride.
Received: 30.10.2015
Citation:
S. A. Kukushkin, A. V. Osipov, O. N. Sergeeva, D. A. Kiselev, A. A. Bogomolov, A. V. Solnyshkin, E. Yu. Kaptelov, S. V. Senkevich, I. P. Pronin, “Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate”, Fizika Tverdogo Tela, 58:5 (2016), 937–940; Phys. Solid State, 58:5 (2016), 967–970
Linking options:
https://www.mathnet.ru/eng/ftt9983 https://www.mathnet.ru/eng/ftt/v58/i5/p937
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