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Fizika Tverdogo Tela, 2019, Volume 61, Issue 12, Pages 2313–2315
DOI: https://doi.org/10.21883/FTT.2019.12.48590.33ks (Mi ftt8555) 		 
This article is cited in 4 scientific papers (total in 4 papers)

International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Semiconductors

Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution

A. S. Grashchenkoa, S. A. Kukushkinab, A. V. Osipovc

a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
b Herzen State Pedagogical University of Russia, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (92 kB) Citations (4)
DOI: https://doi.org/10.21883/FTT.2019.12.48590.33ks
Abstract: The elastic properties of a nanoscale film of silicon carbide grown on a silicon substrate by atom substitution are studied. For the first time, the Young's modulus of nanoscale silicon carbide was measured by nanoindentation. Using optical profilometry and spectral ellipsometry, the structural characteristics of a silicon carbide film on silicon were studied, namely, the film roughness and its thickness were calculated.
Keywords: nanoindentation, atomic substitution, silicon carbide, silicon carbide on silicon, Young's modulus.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.2811.2017/4.6
Russian Science Foundation 19-72-30004
The work accomplished by S.A. Kukushkin was partially supported in terms of the design part of the RF Government task, project no. 16.2811.2917/4.6 of the RF Ministry of Science and Education. A.V. Osipov was supported by the Russian Science Foundation, project no. 19-72-30004.
Received: 16.07.2019
Revised: 16.07.2019
Accepted: 25.07.2019
English version:
Physics of the Solid State, 2019, Volume 61, Issue 12, Pages 2310–2312
DOI: https://doi.org/10.1134/S106378341912014X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, “Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution”, Fizika Tverdogo Tela, 61:12 (2019), 2313–2315; Phys. Solid State, 61:12 (2019), 2310–2312
Citation in format AMSBIB
\Bibitem{GraKukOsi19}
\by A.~S.~Grashchenko, S.~A.~Kukushkin, A.~V.~Osipov
\paper Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 12
\pages 2313--2315
\mathnet{http://mi.mathnet.ru/ftt8555}
\crossref{https://doi.org/10.21883/FTT.2019.12.48590.33ks}
\elib{https://elibrary.ru/item.asp?id=42571115}
\transl
\jour Phys. Solid State
\yr 2019
\vol 61
\issue 12
\pages 2310--2312
\crossref{https://doi.org/10.1134/S106378341912014X}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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