This article is cited in 6 scientific papers (total in 6 papers)
International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019 Semiconductors
Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution
Abstract:
The elastic properties of a nanoscale film of silicon carbide grown on a silicon substrate by atom substitution are studied. For the first time, the Young's modulus of nanoscale silicon carbide was measured by nanoindentation. Using optical profilometry and spectral ellipsometry, the structural characteristics of a silicon carbide film on silicon were studied, namely, the film roughness and its thickness were calculated.
The work accomplished by S.A. Kukushkin was partially supported in terms of the design part of the RF Government task, project no. 16.2811.2917/4.6 of the RF Ministry of Science and Education. A.V. Osipov was supported by the Russian Science Foundation, project no. 19-72-30004.
Citation:
A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, “Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution”, Fizika Tverdogo Tela, 61:12 (2019), 2313–2315; Phys. Solid State, 61:12 (2019), 2310–2312
\Bibitem{GraKukOsi19}
\by A.~S.~Grashchenko, S.~A.~Kukushkin, A.~V.~Osipov
\paper Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 12
\pages 2313--2315
\mathnet{http://mi.mathnet.ru/ftt8555}
\crossref{https://doi.org/10.21883/FTT.2019.12.48590.33ks}
\elib{https://elibrary.ru/item.asp?id=42571115}
\transl
\jour Phys. Solid State
\yr 2019
\vol 61
\issue 12
\pages 2310--2312
\crossref{https://doi.org/10.1134/S106378341912014X}
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This publication is cited in the following 6 articles:
A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, “Nanoindentation of Nano-SiC/Si Hybrid Crystals and AlN, AlGaN, GaN, Ga2O3 Thin Films on Nano-SiC/Si”, Mech. Solids, 59:2 (2024), 605
A. S. Grashchenko, S. A. Kukushkin, S. S. Sharofidinov, “Studies of Structural and Mechanical Properties of AlGaN Thin Films on Nano-SiC/Si Hybrid Substrates”, Semiconductors, 58:2 (2024), 130
V. V. Kidalov, A. S. Revenko, D. Duleba, R. A. Redko, M. Assmann, A. I. Gudimenko, R. P. Johnson, “Investigation of Mechanical Stresses in SiC/Porous-Si Heterostructure”, ECS J. Solid State Sci. Technol., 13:11 (2024), 114003
A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, “Nanoindentation of nano-SiC/Si hybrid crystals and AlN, AlGaN, GaN, Ga<sup>2</sup>O<sup>3</sup> thin films on nano-SiC/Si”, Izvestiâ Rossijskoj akademii nauk. Mehanika tverdogo tela, 2024, no. 2, 40
Sergey Kukushkin, Andrey Osipov, Alexey Redkov, Advanced Structured Materials, 164, Mechanics and Control of Solids and Structures, 2022, 335
S. A. Kukushkin, A. V. Osipov, “Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material”, Inorg Mater, 57:13 (2021), 1319