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This article is cited in 10 scientific papers (total in 10 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice
A. S. Grashchenkoa, N. A. Feoktistovab, A. V. Osipovac, E. V. Kalininab, S. A. Kukushkinacd a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Peter the Great St. Petersburg Polytechnic University
Abstract:
Data obtained in an experimental study of the photoelectric characteristics of silicon–silicon carbide structures grown by the atomic substitution method on silicon (100) and (111) substrates are presented. It is found that the maximum sunlight conversion efficiency of a silicon–silicon carbide (silicon carbide–silicon) heterojunction is 5.4%. The theory of dilatation dipole formation upon synthesis by the atomic substitution method is used to account for the mechanism of electrical barrier formation at the silicon–silicon carbide interface.
Received: 22.11.2016 Accepted: 28.11.2016
Citation:
A. S. Grashchenko, N. A. Feoktistov, A. V. Osipov, E. V. Kalinina, S. A. Kukushkin, “Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 651–658; Semiconductors, 51:5 (2017), 621–627
Linking options:
https://www.mathnet.ru/eng/phts6161 https://www.mathnet.ru/eng/phts/v51/i5/p651
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