|
This article is cited in 22 scientific papers (total in 22 papers)
Surface physics, thin films
Epitaxial gallium oxide on a SiC/Si substrate
S. A. Kukushkinabc, V. I. Nikolaevcde, A. V. Osipovabc, E. V. Osipovaa, A. I. Pechnikovcd, N. A. Feoktistovae a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Perfect Crystals LLC, St. Petersburg, Russia
e Ioffe Institute, St. Petersburg
Abstract:
Well-textured gallium oxide $\beta$-Ga$_{2}$O$_{3}$ layers with a thickness of $\sim$1 $\mu$m and a close to epitaxial layer structure were grown by the method of chloride vapor phase epitaxy on Si(111) wafers with a nano-SiC buffer layer. In order to improve the growth, a high-quality silicon carbide buffer layer $\sim$100 nm thick was preliminarily synthesized by the substitution of atoms on the silicon surface. The $\beta$-Ga$_{2}$O$_{3}$ films were thoroughly investigated using reflection high-energy electron diffraction, ellipsometry, X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. The investigations revealed that the films are textured with a close to epitaxial structure and consist of a pure $\beta$-phase Ga$_{2}$O$_{3}$ with the ($\bar2$01) orientation. The dependence of the dielectric constant of epitaxial $\beta$-Ga$_{2}$O$_{3}$ on the photon energy ranging from 0.7 to 6.5 eV in the isotropic approximation was measured.
Received: 24.03.2016
Citation:
S. A. Kukushkin, V. I. Nikolaev, A. V. Osipov, E. V. Osipova, A. I. Pechnikov, N. A. Feoktistov, “Epitaxial gallium oxide on a SiC/Si substrate”, Fizika Tverdogo Tela, 58:9 (2016), 1812–1817; Phys. Solid State, 58:9 (2016), 1876–1881
Linking options:
https://www.mathnet.ru/eng/ftt9865 https://www.mathnet.ru/eng/ftt/v58/i9/p1812
|
Statistics & downloads: |
Abstract page: | 34 | Full-text PDF : | 93 |
|