Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 522 (Mi phts5848)  
This article is cited in 2 scientific papers (total in 2 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates

R. R. Reznikabcde, K. P. Kotlyara, I. P. Soshnikovac, S. A. Kukushkinf, A. V. Osipovf, G. E. Cirlinabcd

a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
b ITMO University, 197101 St. Petersburg, Russia
c Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
d Peter the Great St. Petersburg Polytechnic University, 195251 St. Petersburg, Russia
e Department of Engineering, Durham Unifersity, Durnam DH13Le, United Kingdom
f Institute of Problems of Mechanical Engineering, Russian Academy of Science, 199178 St. Petersburg, Russia
Full-text PDF (29 kB) Citations (2)
Abstract: The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate–the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.2483.2017/4.6
Russian Science Foundation 14-12-00393
Russian Foundation for Basic Research 16-29-03113 ofi m
We are grateful for the support of the Ministry of education and science of Russian Federation (state task, project No 16.2483.2017/4.6). The nanowire samples were grown under the support of Russian Science Foundation (Project No 14-12-00393). This work was partially supported by RFBR (grant 16-29-03113 ofi m).
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 651–653
DOI: https://doi.org/10.1134/S1063782618050251
Bibliographic databases:
Document Type: Article
Language: English
Citation: R. R. Reznik, K. P. Kotlyar, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 522; Semiconductors, 52:5 (2018), 651–653
Citation in format AMSBIB
\Bibitem{RezKotSos18}
\by R.~R.~Reznik, K.~P.~Kotlyar, I.~P.~Soshnikov, S.~A.~Kukushkin, A.~V.~Osipov, G.~E.~Cirlin
\paper MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 522
\mathnet{http://mi.mathnet.ru/phts5848}
\elib{https://elibrary.ru/item.asp?id=32740386}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 651--653
\crossref{https://doi.org/10.1134/S1063782618050251}
Linking options:
  • https://www.mathnet.ru/eng/phts5848
  • https://www.mathnet.ru/eng/phts/v52/i5/p522
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:40
    Full-text PDF :4
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024