Photoemission studies of the vicinal SiC(100) 4$^\circ$ surface and the Cs/SiC(100) 4$^\circ$ interface

Photoemission studies of the electronic structure of the vicinal SiC(100) 4$^\circ$ surface, which was grown using a new substrate atom substitution method, and the Cs/SiC(100) 4$^\circ$ interface have been performed for the first time. The modification of spectra of the valence band and C 1$s$ and Si 2$p$ core levels in the process of formation of the Cs/SiC(100) 4$^\circ$ interface was analyzed. The suppression of the surface SiC state with a binding energy of 2.8 eV and the formation of a cesium-induced state with a binding energy of 10.5 eV were observed. The modification of the complex component structure in the spectrum of C 1$s$ core level has been detected and examined for the first time. It was found that Cs adsorption on the vicinal SiC(100) 4$^\circ$ surface results in intercalation of graphene islands on SiC(100) 4$^\circ$ with Cs atoms.