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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 15, Pages 15–18
DOI: https://doi.org/10.21883/PJTF.2021.15.51227.18827 (Mi pjtf4717) 		 
This article is cited in 6 scientific papers (total in 6 papers)

Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates

N. A. Cherkashina, A. V. Sakharovb, A. E. Nikolaevbc, V. V. Lundinc, S. O. Usovb, V. M. Ustinovb, A. S. Grashchenkod, S. A. Kukushkind, A. V. Osipove, A. F. Tsatsul'nikovb

a CEMES–CNRS and Université de Toulouse, Toulouse, France
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c Ioffe Institute, St. Petersburg
d Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
e Saint Petersburg State University
Full-text PDF (959 kB) Citations (6)
DOI: https://doi.org/10.21883/PJTF.2021.15.51227.18827
Abstract: Light emitting III – N heterostructures were grown by metalorganic chemical vapor deposition on the SiC/Si (111) templates (substrates) formed by the method of matched substitution of atoms. Investigations of the optical and structural properties of heterostructures were carried out in order to reveal the formation of defects in the structures. It is shown that features of the growth of the (Al, Ga)N buffer layers in such structuresare associated with the presence of pores in the Si substrate under SiC/Si interface. Applying of the optimal design of the buffer layer allows significantly reduce the dislocation density and form active region with high structural quality.
Keywords: gallium nitride, silicone carbide, silicon, III – N heterostructure, gas-phase epitaxy from organometallic compounds.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation FFNF-2021-0001
61520973
A.S. Grashchenko and S.A. Kukushkin performed their part of the work with the support of the Ministry of Science and Higher Education of the Russian Federation as a part of state order to the Federal State Unitary Enterprise Institute of Machine Science Problems of the Russian Academy of Sciences under contract no. FFNF-2021-0001. A.V. Osipov performed his part of the work with the support of the Ministry of Science and Higher Education of the Russian Federation as a part of a state order under a contract of St. Petersburg State University no. 61520973.
Received: 12.04.2021
Revised: 29.04.2021
Accepted: 29.04.2021
English version:
Technical Physics Letters, 2021, Volume 47, Issue 10, Pages 753–756
DOI: https://doi.org/10.1134/S106378502108006X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Cherkashin, A. V. Sakharov, A. E. Nikolaev, V. V. Lundin, S. O. Usov, V. M. Ustinov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, A. F. Tsatsul'nikov, “Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 15–18; Tech. Phys. Lett., 47:10 (2021), 753–756
Citation in format AMSBIB
\Bibitem{CheSakNik21}
\by N.~A.~Cherkashin, A.~V.~Sakharov, A.~E.~Nikolaev, V.~V.~Lundin, S.~O.~Usov, V.~M.~Ustinov, A.~S.~Grashchenko, S.~A.~Kukushkin, A.~V.~Osipov, A.~F.~Tsatsul'nikov
\paper Peculiarities of epitaxial growth of III -- N led heterostructures on SiC/Si substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 15
\pages 15--18
\mathnet{http://mi.mathnet.ru/pjtf4717}
\crossref{https://doi.org/10.21883/PJTF.2021.15.51227.18827}
\elib{https://elibrary.ru/item.asp?id=46333491}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 10
\pages 753--756
\crossref{https://doi.org/10.1134/S106378502108006X}
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