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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 11, Pages 22–25
DOI: https://doi.org/10.21883/PJTF.2020.11.49494.18272 (Mi pjtf5087) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates

S. A. Kukushkinab, A. V. Osipova, A. V. Redkovc, Sh. Sh. Sharofidinovd

a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Ioffe Institute, St. Petersburg
Full-text PDF (489 kB) Citations (5)
DOI: https://doi.org/10.21883/PJTF.2020.11.49494.18272
Abstract: The possibility of growing bulk (more than 7 μm thick) epitaxial semipolar AlN films on Si(001) and hybrid SiC/Si(001) substrates without cracks has been investigated. It is found that an AlN layer grown on the Si substrate is extended, whereas an AlN layer grown on the hybrid SiC/Si substrate is compressed. The limiting (critical) thickness of the semipolar AlN layer on the Si(001) substrate is determined to be ∼ 7.5 μm. When the film thickness exceeds this value, an ensemble of cracks is formed in the film, leading to its total cracking and exfoliation from the substrate. The semipolar epitaxial AlN films with a thickness of more than 40 μm are grown on hybrid SiC/Si substrates without cracking and exfoliation from the substrate.
Keywords: aluminum nitride, semipolar aluminum nitride, hydride vapor-phase epitaxy, silicon carbide, silicon, atomic substitution method.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation АААА-А18-118012790011-3
Russian Science Foundation 19-72-30004
Studies by S.A. Kukushkin and A.V. Osipov were performed within the framework of a state order to the Institute of Problems in Machine Science of the Russian Academy of Sciences, no. AAAA-A18-118012790011-3. A.V. Red’kov acknowledges the support of the Russian Science Foundation, project no. 19-72-30004.
Received: 03.03.2020
Revised: 03.03.2020
Accepted: 10.03.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 6, Pages 539–542
DOI: https://doi.org/10.1134/S106378502006005X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Kukushkin, A. V. Osipov, A. V. Redkov, Sh. Sh. Sharofidinov, “Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 22–25; Tech. Phys. Lett., 46:6 (2020), 539–542
Citation in format AMSBIB
\Bibitem{KukOsiRed20}
\by S.~A.~Kukushkin, A.~V.~Osipov, A.~V.~Redkov, Sh.~Sh.~Sharofidinov
\paper Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 11
\pages 22--25
\mathnet{http://mi.mathnet.ru/pjtf5087}
\crossref{https://doi.org/10.21883/PJTF.2020.11.49494.18272}
\elib{https://elibrary.ru/item.asp?id=43800715}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 6
\pages 539--542
\crossref{https://doi.org/10.1134/S106378502006005X}
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  • https://www.mathnet.ru/eng/pjtf/v46/i11/p22
    • This publication is cited in the following 5 articles:
    1. Saif Taqy, Pallab Sarkar, Md Abdul Hamid, Tarik Pranto, Edwin L. Piner, Ravi Droopad, Ariful Haque, “Diamond deposition on AlN using Q-carbon interlayer through overcoming the substrate limitations”, Carbon, 219 (2024), 118809  crossref
    2. Sergey Kukushkin, Andrey Osipov, Alexey Redkov, Advanced Structured Materials, 164, Mechanics and Control of Solids and Structures, 2022, 335  crossref
    3. Alexander A. Koryakin, Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh. Sharofidinov, Mikhail P. Shcheglov, “Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates”, Materials, 15:18 (2022), 6202  crossref
    4. Yao Zhang, Yanhui Xing, Jun Han, Xuan Zhang, Xuemin Zhang, Li Zhang, Liguo Zhang, Tao Ju, Baoshun Zhang, “Improving AlN crystalline quality by high-temperature ammonia-free microwave plasma chemical vapor deposition”, Appl. Phys. Express, 14:5 (2021), 055503  crossref
    5. Qian Zhang, Xu Li, Jianyun Zhao, Zhifei Sun, Yong Lu, Ting Liu, Jicai Zhang, “Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE”, Micromachines, 12:10 (2021), 1153  crossref
    Citing articles in Google Scholar: Russian citations, English citations
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