Abstract:
The possibility of growing bulk (more than 7 μm thick) epitaxial semipolar AlN films on Si(001) and hybrid SiC/Si(001) substrates without cracks has been investigated. It is found that an AlN layer grown on the Si substrate is extended, whereas an AlN layer grown on the hybrid SiC/Si substrate is compressed. The limiting (critical) thickness of the semipolar AlN layer on the Si(001) substrate is determined to be ∼ 7.5 μm. When the film thickness exceeds this value, an ensemble of cracks is formed in the film, leading to its total cracking and exfoliation from the substrate. The semipolar epitaxial AlN films with a thickness of more than 40 μm are grown on hybrid SiC/Si substrates without cracking and exfoliation from the substrate.
Studies by S.A. Kukushkin and A.V. Osipov were performed within the framework of a state order to the Institute of Problems in Machine Science of the Russian Academy of Sciences, no. AAAA-A18-118012790011-3. A.V. Red’kov acknowledges the support of the Russian Science Foundation, project no. 19-72-30004.
Citation:
S. A. Kukushkin, A. V. Osipov, A. V. Redkov, Sh. Sh. Sharofidinov, “Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 22–25; Tech. Phys. Lett., 46:6 (2020), 539–542
\Bibitem{KukOsiRed20}
\by S.~A.~Kukushkin, A.~V.~Osipov, A.~V.~Redkov, Sh.~Sh.~Sharofidinov
\paper Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 11
\pages 22--25
\mathnet{http://mi.mathnet.ru/pjtf5087}
\crossref{https://doi.org/10.21883/PJTF.2020.11.49494.18272}
\elib{https://elibrary.ru/item.asp?id=43800715}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 6
\pages 539--542
\crossref{https://doi.org/10.1134/S106378502006005X}
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This publication is cited in the following 5 articles:
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Sergey Kukushkin, Andrey Osipov, Alexey Redkov, Advanced Structured Materials, 164, Mechanics and Control of Solids and Structures, 2022, 335
Alexander A. Koryakin, Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh. Sharofidinov, Mikhail P. Shcheglov, “Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates”, Materials, 15:18 (2022), 6202
Yao Zhang, Yanhui Xing, Jun Han, Xuan Zhang, Xuemin Zhang, Li Zhang, Liguo Zhang, Tao Ju, Baoshun Zhang, “Improving AlN crystalline quality by high-temperature ammonia-free microwave plasma chemical vapor deposition”, Appl. Phys. Express, 14:5 (2021), 055503
Qian Zhang, Xu Li, Jianyun Zhao, Zhifei Sun, Yong Lu, Ting Liu, Jicai Zhang, “Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE”, Micromachines, 12:10 (2021), 1153