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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 18, Pages 3–6
DOI: https://doi.org/10.21883/PJTF.2021.18.51462.18877 (Mi pjtf4673) 		 
This article is cited in 3 scientific papers (total in 3 papers)

A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology

L. K. Markova, S. A. Kukushkinb, I. P. Smirnovaa, A. S. Pavluchenkoa, A. S. Grashchenkoc, A. V. Osipovb, G. V. Svyatetsd, A. E. Nikolaeva, A. V. Sakharova, V. V. Lundina, A. F. Tsatsul'nikovae

a Ioffe Institute, St. Petersburg
b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
c Saint Petersburg State University
d Scientific and Technical Center New Technologies, Petersburg, Russia
e Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
Full-text PDF (196 kB) Citations (3)
DOI: https://doi.org/10.21883/PJTF.2021.18.51462.18877
Abstract: The technique and technology for fabricating both LED chips and packaged LEDs based on InGaN/GaN heterostructures grown on novel SiC/Si substrates synthesized by the method of matched atomic substitution have been described. The current-voltage characteristics, luminescence spectra, and the current dependences of output power and external quantum efficiency have been studied. It is shown that the presence of pores naturally formed in the SiC/Si substrate during its growth leads to a substantial increase in the quantum efficiency of LEDs in comparison with that of LEDs fabricated on silicon without a SiC sublayer.
Keywords: LEDs, silicon LEDs, silicon-carbide LEDs on silicon, silicon carbide on silicon, AlInGaN/GaN/SiC/Si heterostructures.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation FFNF-2021-0001
Saint Petersburg State University 75746688
S.A. Kukushkin and A.V. Osipov performed their part of the work with the support of the Ministry of Science and Higher Education of the Russian Federation in the framework of a state order under contract no. FFNF-2021-0001. A.S. Grashchenko did his part of the work with the support of a grant from St. Petersburg State University, no. 61520973.
Received: 18.05.2021
Revised: 18.05.2021
Accepted: 01.06.2021
English version:
Technical Physics Letters, 2022
DOI: https://doi.org/10.1134/S1063785022020043
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. K. Markov, S. A. Kukushkin, I. P. Smirnova, A. S. Pavluchenko, A. S. Grashchenko, A. V. Osipov, G. V. Svyatets, A. E. Nikolaev, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, “A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 3–6
Citation in format AMSBIB
\Bibitem{MarKukSmi21}
\by L.~K.~Markov, S.~A.~Kukushkin, I.~P.~Smirnova, A.~S.~Pavluchenko, A.~S.~Grashchenko, A.~V.~Osipov, G.~V.~Svyatets, A.~E.~Nikolaev, A.~V.~Sakharov, V.~V.~Lundin, A.~F.~Tsatsul'nikov
\paper A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 18
\pages 3--6
\mathnet{http://mi.mathnet.ru/pjtf4673}
\crossref{https://doi.org/10.21883/PJTF.2021.18.51462.18877}
\elib{https://elibrary.ru/item.asp?id=46321948}
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