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Uspekhi Fizicheskikh Nauk, 1998, Volume 168, Number 10, Pages 1083–1116
DOI: https://doi.org/10.3367/UFNr.0168.199810b.1083
(Mi ufn1523)
 

This article is cited in 241 scientific papers (total in 241 papers)

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Thin-film condensation processes

S. A. Kukushkin, A. V. Osipov

Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
Abstract: The status of knowledge of phase nucleation and growth processes on a solid surface in one- and multicomponent systems is surveyed. The formation kinetics and subsequent evolution of new phase islands are investigated. Models for film growth from the vapor and solution-melt are analyzed which include island distribution by size, the degree of coalescence, island orientation, morphological stability, etc. The Ostwald ripening of the ensembles of multicomponent islands of a new phase is considered for both the isothermal and non-isothermal cases and nonlinear effects involved in the growth of continuous structures are examined. The problem of controllable growth of new phase layers is discussed.
Received: December 31, 1998
English version:
Physics–Uspekhi, 1998, Volume 41, Issue 10, Pages 983–1014
DOI: https://doi.org/10.1070/PU1998v041n10ABEH000461
Bibliographic databases:
Document Type: Article
PACS: 68.35.-p, 68.18.+p, 68.15.+e, 81.15.-z
Language: Russian


Citation: S. A. Kukushkin, A. V. Osipov, “Thin-film condensation processes”, UFN, 168:10 (1998), 1083–1116; Phys. Usp., 41:10 (1998), 983–1014
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