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This article is cited in 1 scientific paper (total in 1 paper)
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
R. R. Reznikabcd, K. P. Kotlyara, I. V. Shtromace, I. P. Sotnikovace, S. A. Kukushkinf, A. V. Osipovf, G. E. Cirlinbca a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
d Peter the Great St. Petersburg Polytechnic University
e Ioffe Institute, St. Petersburg
f Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
Abstract:
The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs.
Received: 27.04.2016 Accepted: 12.05.2017
Citation:
R. R. Reznik, K. P. Kotlyar, I. V. Shtrom, I. P. Sotnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1525–1529; Semiconductors, 51:11 (2017), 1472–1476
Linking options:
https://www.mathnet.ru/eng/phts6001 https://www.mathnet.ru/eng/phts/v51/i11/p1525
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