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This article is cited in 12 scientific papers (total in 12 papers)
Manufacturing, processing, testing of materials and structures
Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types
S. A. Kukushkinabc, A. V. Osipovab, A. V. Redkovac a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Peter the Great St. Petersburg Polytechnic University
Abstract:
A chemical-etching based method for separating GaN/AlN and AlN epitaxial heterostructures grown on silicon with a silicon-carbide buffer layer and transferring them to substrates of any type is developed. GaN/AlN/SiC and AlN/SiC heterostructures 2.5 $\mu$m and 18 $\mu$m thick, respectively, are separated and transferred to a glass substrate. It is shown that a silicon-carbide buffer layer on silicon, grown by the substitution method, has a developed subsurface structure which allows easy separation of the film from the substrate and promotes the relaxation of elastic energy caused by a difference in thermal-expansion coefficients of the film and substrate. It is shown that mechanical stresses in the film after its separation from the silicon substrate almost completely relaxed.
Received: 12.07.2016 Accepted: 17.08.2016
Citation:
S. A. Kukushkin, A. V. Osipov, A. V. Redkov, “Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 414–420; Semiconductors, 51:3 (2017), 396–401
Linking options:
https://www.mathnet.ru/eng/phts6220 https://www.mathnet.ru/eng/phts/v51/i3/p414
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