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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 8, Pages 621–624
DOI: https://doi.org/10.21883/FTP.2021.08.51125.01 (Mi phts4990) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy

I. V. Ilkivab, K. P. Kotlyarb, D. A. Kirilenkoc, A. V. Osipovd, I. P. Sotnikovac, A. N. Terpitskya, G. E. Cirlina

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint Petersburg State University
c Ioffe Institute, St. Petersburg
d Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
Full-text PDF (793 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2021.08.51125.01
Abstract: The results of experimental studies concerned with the deposition of Ge onto the surface of AlGaAs nanowires are reported. The formation of both cubic and hexagonal Ge phases is detected by means of Raman spectroscopy. It is shown that thin Ge layers in the hexagonal phase are formed mainly on lateral surfaces of wurtzite-structured nanowires due to inheritance of the crystal structure.
Keywords: nanowires, germanium, molecular-beam epitaxy, semiconductors, heterostructures.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0791-2020-0003
АААА-А18-118012790011-3
The study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 0791-2020-0003. The part of the study performed by A.V. Osipov was conducted in accordance with State assignment for Institute for Problems of Mechanical Engineering, Russian Academy of Sciences, no. AAAA-A18-118012790011-3. TEM study was carried out using the equipment of the Federal Collective Use Center '​Materials Science and Diagnostics in advanced technologies (RFMEFI62119X0021).
Received: 09.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2021, Volume 55, Issue 8, Pages 678–681
DOI: https://doi.org/10.1134/S1063782621080108
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko, A. V. Osipov, I. P. Sotnikov, A. N. Terpitsky, G. E. Cirlin, “Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 621–624; Semiconductors, 55:8 (2021), 678–681
Citation in format AMSBIB
\Bibitem{IlkKotKir21}
\by I.~V.~Ilkiv, K.~P.~Kotlyar, D.~A.~Kirilenko, A.~V.~Osipov, I.~P.~Sotnikov, A.~N.~Terpitsky, G.~E.~Cirlin
\paper Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 8
\pages 621--624
\mathnet{http://mi.mathnet.ru/phts4990}
\crossref{https://doi.org/10.21883/FTP.2021.08.51125.01}
\elib{https://elibrary.ru/item.asp?id=46480611}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 8
\pages 678--681
\crossref{https://doi.org/10.1134/S1063782621080108}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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