Abstract:
Silicon carbide samples synthesized from silicon by topochemical substitution of atoms are studied by the ion channeling method. The results of the analysis unambiguously demonstrate the occurrence of structural heteroepitaxy. The lattice of synthesized silicon carbide of hexagonal polytype 6H is epitaxially matched in the $\langle$0001$\rangle$ direction with the lattice grating grid array network of an initial substrate silicon in the $\langle$111$\rangle$ direction. The main features of structural self-coupling matching in this epitaxial heterocomposite are revealed. Despite the very large silicon carbide and silicon lattice parameter mismatch, the misfit dislocation density at the interface is low, which is a feature of the topochemical substitution method leading to comparable structures.
Citation:
V. K. Egorov, E. V. Egorov, S. A. Kukushkin, A. V. Osipov, “Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide”, Fizika Tverdogo Tela, 59:4 (2017), 755–761; Phys. Solid State, 59:4 (2017), 773–779
\Bibitem{EgoEgoKuk17}
\by V.~K.~Egorov, E.~V.~Egorov, S.~A.~Kukushkin, A.~V.~Osipov
\paper Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide
\jour Fizika Tverdogo Tela
\yr 2017
\vol 59
\issue 4
\pages 755--761
\mathnet{http://mi.mathnet.ru/ftt9616}
\crossref{https://doi.org/10.21883/FTT.2017.04.44279.261}
\elib{https://elibrary.ru/item.asp?id=29257190}
\transl
\jour Phys. Solid State
\yr 2017
\vol 59
\issue 4
\pages 773--779
\crossref{https://doi.org/10.1134/S1063783417040072}
Linking options:
https://www.mathnet.ru/eng/ftt9616
https://www.mathnet.ru/eng/ftt/v59/i4/p755
This publication is cited in the following 3 articles:
S. A. Kukushkin, A. V. Osipov, “Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)”, Russ J Gen Chem, 92:4 (2022), 584
S. A. Kukushkin, A. V. Osipov, “Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material”, Inorg Mater, 57:13 (2021), 1319
Vladimir Egorov, Evgeny Egorov, Ion Beam Applications, 2018