Mechanism of diffusion of carbon and silicon monooxides in a cubic silicon carbide crystal

The basic processes are described occurring in the case of the diffusion of carbon monoxide CO and silicon monoxide SiO through a layer of single-crystal silicon carbide SiC. This problem arises when a single-crystal SiC layer is grown by the method of atom substitution due to the chemical reaction of a crystalline silicon substrate with CO gas. The reaction products are the epitaxial layer of SiC and the gas SiO. It has been shown that CO and SiO molecules decompose in SiC crystals. Oxygen atoms migrate through interstitials in the [110] direction only with an activation energy of 2.6 eV. The migration of Si and C atoms occurs by the vacancy mechanism in the corresponding sublattices with activation energies of 3.6 eV and 3.9 eV, respectively, and also in the [110] direction only.