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Publications in Math-Net.Ru |
Citations |
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2023 |
1. |
S. J. Tariverdiyev, A. E. Drakin, O. V. Pagayev, G. T. Mikayelyan, A. L. Koromyslov, A. V. Berezutskiy, A. I. Demidchik, “Homogeneous luminescence distribution in the active element of high-power diode-pumped quantrons”, Kvantovaya Elektronika, 53:9 (2023), 689–694 |
2. |
A. P. Bogatov, A. E. Drakin, N. V. D'yachkov, G. T. Mikayelyan, V. A. Panarin, “Structure of axial modes of a diode laser with an external cavity containing a volume phase grating”, Kvantovaya Elektronika, 53:7 (2023), 519–526 [Bull. Lebedev Physics Institute, 50:suppl. 11 (2023), S1169–S1180] |
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2022 |
3. |
A. P. Bogatov, V. V. Vasil'ev, M. I. Vas'kovskaya, V. L. Velichansky, A. E. Drakin, S. A. Zibrov, K. M. Sabakar, Å. À. Tsygankov, D. S. Chuchelov, “Optical method for determining the amplitude of microwave current modulation in vertical-cavity surface emitting lasers”, Kvantovaya Elektronika, 52:10 (2022), 895–898 [Bull. Lebedev Physics Institute, 50:suppl. 2 (2023), S163–S168] |
4. |
V. A. Panarin, G. T. Mikayelyan, I. V. Galushka, N. N. Begletsova, I. A. Zimin, A. E. Drakin, N. V. D'yachkov, T. I. Gushchik, A. P. Bogatov, “High-power, narrow-band radiation source based on integrated external-cavity laser diodes”, Kvantovaya Elektronika, 52:9 (2022), 789–793 [Bull. Lebedev Physics Institute, 50:suppl. 1 (2023), S11–S17] |
1
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5. |
N. S. Utkov, A. E. Drakin, G. T. Mikayelyan, “Effect of the thickness of the passivating reactive titanium layer of mirror facets on the electrical characteristics of diode lasers”, Kvantovaya Elektronika, 52:8 (2022), 728–730 [Bull. Lebedev Physics Institute, 49:suppl. 1 (2022), S53–S57] |
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2019 |
6. |
A. P. Bogatov, A. E. Drakin, G. T. Mikayelyan, “Coherent combining of diode laser beams in a master oscillator – zigzag slab power amplifier system”, Kvantovaya Elektronika, 49:11 (2019), 1014–1018 [Quantum Electron., 49:11 (2019), 1014–1018 ] |
2
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7. |
A. P. Bogatov, A. E. Drakin, “Role of spontaneous emission in the formation of the steady-state optical spectrum of a diode laser”, Kvantovaya Elektronika, 49:8 (2019), 717–727 [Quantum Electron., 49:8 (2019), 717–727 ] |
3
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2018 |
8. |
D. A. Zayarnyi, A. E. Drakin, A. A. Ionin, A. Yu. L'dov, D. V. Sinitsyn, N. N. Ustinovskii, I. V. Kholin, “Electron-beam-excited high-pressure He – Ar mixture as a potential active medium for an optically pumped laser”, Kvantovaya Elektronika, 48:12 (2018), 1174–1178 [Quantum Electron., 48:12 (2018), 1174–1178 ] |
3
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2017 |
9. |
M. I. Vas'kovskaya, V. V. Vasil'ev, S. A. Zibrov, V. L. Velichansky, I. V. Akimova, A. P. Bogatov, A. E. Drakin, “Amplitude/phase modulation and spectrum of the vertical-cavity surface-emitting laser output”, Kvantovaya Elektronika, 47:9 (2017), 835–841 [Quantum Electron., 47:9 (2017), 835–841 ] |
11
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10. |
T. I. Gushchik, A. E. Drakin, N. V. D'yachkov, V. V. Romanov, “Gain distribution in the volume of a solid-state active element of a diode-pumped high-power laser”, Kvantovaya Elektronika, 47:7 (2017), 620–626 [Quantum Electron., 47:7 (2017), 620–626 ] |
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2016 |
11. |
A. P. Bogatov, A. E. Drakin, N. V. D'yachkov, T. I. Gushchik, “Intrinsic spontaneous emission-induced fluctuations of the output optical beam power and phase in a diode amplifier”, Kvantovaya Elektronika, 46:8 (2016), 699–702 [Quantum Electron., 46:8 (2016), 699–702 ] |
2
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12. |
A. P. Bogatov, A. E. Drakin, N. V. D'yachkov, T. I. Gushchik, “Amplified spontaneous emission spectrum at the output of a diode amplifier saturated by an input monochromatic wave”, Kvantovaya Elektronika, 46:8 (2016), 693–698 [Quantum Electron., 46:8 (2016), 693–698 ] |
3
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2014 |
13. |
N. V. D'yachkov, A. P. Bogatov, T. I. Gushchik, A. E. Drakin, “Experimental study of a modulated beam AlGaAs/GaAs diode amplifier operating in the highly saturated gain regime”, Kvantovaya Elektronika, 44:11 (2014), 1005–1011 [Quantum Electron., 44:11 (2014), 1005–1011 ] |
6
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14. |
N. V. D'yachkov, A. P. Bogatov, T. I. Gushchik, A. E. Drakin, “Diode amplifier of modulated optical beam power”, Kvantovaya Elektronika, 44:11 (2014), 997–1004 [Quantum Electron., 44:11 (2014), 997–1004 ] |
7
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2013 |
15. |
A. P. Bogatov, N. V. D'yachkov, A. E. Drakin, T. I. Gushchik, “Amplitude and phase modulation of radiation in a travelling-wave amplifier based on a laser diode”, Kvantovaya Elektronika, 43:8 (2013), 699–705 [Quantum Electron., 43:8 (2013), 699–705 ] |
5
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2010 |
16. |
A. P. Bogatov, A. E. Drakin, N. V. D'yachkov, “Performance of an optical amplifier/modulator based on a diode laser”, Kvantovaya Elektronika, 40:9 (2010), 782–788 [Quantum Electron., 40:9 (2010), 782–788 ] |
5
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17. |
D. R. Miftakhutdinov, A. P. Bogatov, A. E. Drakin, “Catastrophic optical degradation of the output facet of high-power single-transverse-mode diode lasers. 2. Calculation of the spatial temperature distribution and threshold of the catastrophic optical degradation”, Kvantovaya Elektronika, 40:7 (2010), 589–595 [Quantum Electron., 40:7 (2010), 589–595 ] |
9
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18. |
D. R. Miftakhutdinov, A. P. Bogatov, A. E. Drakin, “Catastrophic optical degradation of the output facet of high-power single-transverse-mode diode lasers. 1. Physical model”, Kvantovaya Elektronika, 40:7 (2010), 583–588 [Quantum Electron., 40:7 (2010), 583–588 ] |
12
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2008 |
19. |
D. R. Miftakhutdinov, I. V. Akimova, A. P. Bogatov, T. I. Gushchik, A. E. Drakin, N. V. D'yachkov, V. V. Popovichev, A. P. Nekrasov, “Radiation parameters of ridge lasers at high pump currents”, Kvantovaya Elektronika, 38:11 (2008), 993–1000 [Quantum Electron., 38:11 (2008), 993–1000 ] |
10
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20. |
A. P. Bogatov, T. I. Gushchik, A. E. Drakin, A. P. Nekrasov, V. V. Popovichev, “Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power”, Kvantovaya Elektronika, 38:10 (2008), 935–939 [Quantum Electron., 38:10 (2008), 935–939 ] |
18
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21. |
A. P. Bogatov, A. E. Drakin, D. R. Miftakhutdinov, G. T. Mikayelyan, A. N. Starodub, “Diode-array-pumped repetitively pulsed neodymium phosphate glass laser”, Kvantovaya Elektronika, 38:9 (2008), 805–812 [Quantum Electron., 38:9 (2008), 805–812 ] |
1
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22. |
D. V. Batrak, A. P. Bogatov, A. E. Drakin, N. V. D'yachkov, D. R. Miftakhutdinov, “Modes of a semiconductor rectangular microcavity”, Kvantovaya Elektronika, 38:1 (2008), 16–22 [Quantum Electron., 38:1 (2008), 16–22 ] |
2
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2006 |
23. |
S. A. Plisyuk, D. V. Batrak, A. E. Drakin, A. P. Bogatov, “Simulation of emission characteristics and optimisation of waveguiding parameters of a ridge semiconductor heterolaser to maximise the emission brightness”, Kvantovaya Elektronika, 36:11 (2006), 1058–1064 [Quantum Electron., 36:11 (2006), 1058–1064 ] |
12
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24. |
D. R. Miftakhutdinov, D. V. Batrak, A. P. Bogatov, A. E. Drakin, S. A. Plisyuk, “Autocorrelation function and emission spectrum of single-transverse-mode heterolasers in the self-sustained intensity pulsation regime”, Kvantovaya Elektronika, 36:8 (2006), 751–757 [Quantum Electron., 36:8 (2006), 751–757 ] |
1
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25. |
A. P. Bogatov, A. E. Drakin, D. V. Batrak, R. Güther, K. Paschke, H. Wenzel, “Spectral properties of a semiconductor α-DFB laser cavity”, Kvantovaya Elektronika, 36:8 (2006), 745–750 [Quantum Electron., 36:8 (2006), 745–750 ] |
3
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26. |
A. P. Bogatov, A. E. Drakin, G. T. Mikayelyan, D. R. Miftakhutdinov, V. I. Stadnichuk, A. N. Starodub, “Efficiency of resonance pumping and optical gain in a Nd-doped phosphate glass excited by diode arrays”, Kvantovaya Elektronika, 36:4 (2006), 302–308 [Quantum Electron., 36:4 (2006), 302–308 ] |
3
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2005 |
27. |
S. A. Plisyuk, I. V. Akimova, A. E. Drakin, A. V. Borodaenko, A. A. Stratonnikov, V. V. Popovichev, A. P. Bogatov, “Quality of the optical beam of a high-power, single-mode, 0.81-μm ridge AlGaAs heterolaser”, Kvantovaya Elektronika, 35:6 (2005), 515–519 [Quantum Electron., 35:6 (2005), 515–519 ] |
1
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28. |
D. V. Batrak, S. A. Bogatova, A. V. Borodaenko, A. E. Drakin, A. P. Bogatov, “Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers”, Kvantovaya Elektronika, 35:4 (2005), 316–322 [Quantum Electron., 35:4 (2005), 316–322 ] |
6
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2002 |
29. |
V. V. Popovichev, E. I. Davydova, A. A. Marmalyuk, A. V. Simakov, M. B. Uspenskiy, A. A. Chel'nyi, A. P. Bogatov, A. E. Drakin, S. A. Plisyuk, A. A. Stratonnikov, “High-power single-transverse-mode ridge optical waveguide semiconductor lasers”, Kvantovaya Elektronika, 32:12 (2002), 1099–1104 [Quantum Electron., 32:12 (2002), 1099–1104 ] |
21
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30. |
A. P. Bogatov, A. E. Drakin, S. A. Plisyuk, A. A. Stratonnikov, M. Sh. Kobyakova, A. V. Zubanov, A. A. Marmalyuk, A. A. Padalitsa, “Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers”, Kvantovaya Elektronika, 32:9 (2002), 809–814 [Quantum Electron., 32:9 (2002), 809–814 ] |
4
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2001 |
31. |
A. P. Bogatov, A. E. Drakin, A. A. Lyakh, A. A. Stratonnikov, “Dependence of the radiation pattern of a leaky-mode, quantum-well heterolaser on the pump current”, Kvantovaya Elektronika, 31:10 (2001), 847–852 [Quantum Electron., 31:10 (2001), 847–852 ] |
5
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2000 |
32. |
A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, V. P. Konyaev, “Optical loss in strained quantum-well semiconductor ridge lasers”, Kvantovaya Elektronika, 30:10 (2000), 878–880 [Quantum Electron., 30:10 (2000), 878–880 ] |
1
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33. |
A. P. Bogatov, A. E. Drakin, A. A. Stratonnikov, V. P. Konyaev, “Brightness and filamentation of a beam from powerful cw quantum-well In<sub>0.2</sub>Ga<sub>0.8</sub>As/GaAs lasers”, Kvantovaya Elektronika, 30:5 (2000), 401–405 [Quantum Electron., 30:5 (2000), 401–405 ] |
22
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34. |
A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, M. A. Belkin, V. P. Konyaev, “Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers”, Kvantovaya Elektronika, 30:4 (2000), 315–320 [Quantum Electron., 30:4 (2000), 315–320 ] |
5
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1999 |
35. |
A. P. Bogatov, A. E. Drakin, A. A. Stratonnikov, Yu. S. Alaverdyan, A. V. Ustinov, V. I. Shveikin, “Experimental determination of the factor representing spontaneous emission into a mode of a semiconductor laser operating on a leaky wave”, Kvantovaya Elektronika, 27:2 (1999), 131–133 [Quantum Electron., 29:5 (1999), 410–412 ] |
4
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36. |
V. I. Shveikin, A. P. Bogatov, A. E. Drakin, Yu. V. Kurnyavko, “Angular distribution of the radiation from quantum-well ‘leaky-wave’ InGaAs/GaAs lasers”, Kvantovaya Elektronika, 26:1 (1999), 33–36 [Quantum Electron., 29:1 (1999), 33–36 ] |
11
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37. |
A. P. Bogatov, A. E. Drakin, V. I. Shveikin, “Efficiency and intensity distribution in a semiconductor laser operating in the ‘leaky’ regime”, Kvantovaya Elektronika, 26:1 (1999), 28–32 [Quantum Electron., 29:1 (1999), 28–32 ] |
6
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1998 |
38. |
I. V. Akimova, A. P. Bogatov, A. E. Drakin, V. P. Konyaev, “Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures”, Kvantovaya Elektronika, 25:7 (1998), 647–650 [Quantum Electron., 28:7 (1998), 629–632 ] |
5
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39. |
A. P. Bogatov, A. E. Drakin, V. R. Medvedev, A. V. Ustinov, “Calculation of the propagation constant of a laser mode in multilayer quantum-well heterostructures by the ‘incoming’ wave method”, Kvantovaya Elektronika, 25:6 (1998), 488–492 [Quantum Electron., 28:6 (1998), 474–477 ] |
2
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1996 |
40. |
P. G. Eliseev, A. E. Drakin, “Self-distribution of the current in laser diodes and its possible use for reducing the optical nonlinearity of the active medium”, Kvantovaya Elektronika, 23:4 (1996), 307–310 [Quantum Electron., 26:4 (1996), 299–302 ] |
5
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1995 |
41. |
P. G. Eliseev, G. Beister, A. E. Drakin, I. V. Akimova, G. Erbert, J. Maege, J. Sebastian, “Power hysteresis and waveguide bistability of stripe quantum-well InGaAsGaAsGaAIAs heterolasers with a strained active layer”, Kvantovaya Elektronika, 22:4 (1995), 309–320 [Quantum Electron., 25:4 (1995), 291–301 ] |
1
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1992 |
42. |
E. I. Davydova, A. E. Drakin, P. G. Eliseev, G. T. Pak, V. V. Popovichev, M. B. Uspenskiy, S. E. Khlopotin, V. A. Shishkin, “Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region”, Kvantovaya Elektronika, 19:10 (1992), 1024–1031 [Sov J Quantum Electron, 22:10 (1992), 954–960 ] |
4
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1989 |
43. |
I. V. Akimova, M. G. Vasil'ev, E. G. Golikova, A. E. Drakin, P. G. Eliseev, V. I. Romantsevich, B. N. Sverdlov, V. I. Shveĭkin, A. A. Shelyakin, “Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and <i>n</i>-type InP substrates”, Kvantovaya Elektronika, 16:3 (1989), 457–462 [Sov J Quantum Electron, 19:3 (1989), 303–306 ] |
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1988 |
44. |
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, “Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm”, Kvantovaya Elektronika, 15:11 (1988), 2171–2172 [Sov J Quantum Electron, 18:11 (1988), 1362–1363 ] |
40
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1987 |
45. |
I. V. Akimova, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, B. N. Sverdlov, “Fast degradation defects on reflecting faces of InGaAsP/lnP lasers emitting in the 1.3 μ range”, Kvantovaya Elektronika, 14:1 (1987), 204–205 [Sov J Quantum Electron, 17:1 (1987), 121–122 ] |
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1986 |
46. |
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, “Injection InGaSbAs laser emitting at 2.4<i>μ</i> (300K)”, Kvantovaya Elektronika, 13:10 (1986), 2119–2120 [Sov J Quantum Electron, 16:10 (1986), 1397 ] |
2
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1985 |
47. |
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, “Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature”, Kvantovaya Elektronika, 12:6 (1985), 1309–1311 [Sov J Quantum Electron, 15:6 (1985), 869–870 ] |
26
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1984 |
48. |
V. P. Avdeeva, V. V. Bezotosnyi, M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, N. V. Mal'kova, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM)
HETEROSTRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984), 551–557 |
49. |
L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm<sup>2</sup> at 300 Ê”, Kvantovaya Elektronika, 11:4 (1984), 645–646 [Sov J Quantum Electron, 14:4 (1984), 439–441 ] |
3
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50. |
M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, A. V. Ivanov, P. G. Eliseev, V. P. Konyaev, B. N. Sverdlov, V. A. Skripkin, V. I. Shveĭkin, E. G. Shevchenko, A. A. Shelyakin, G. V. Shepekina, “Three-layer waveguide InGaAsP/lnP injection lasers”, Kvantovaya Elektronika, 11:3 (1984), 631–633 [Sov J Quantum Electron, 14:3 (1984), 431–432 ] |
1
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51. |
P. G. Eliseev, A. E. Drakin, “Qualitative analysis of the threshold current of quantum-size semiconductor lasers”, Kvantovaya Elektronika, 11:1 (1984), 178–181 [Sov J Quantum Electron, 14:1 (1984), 119–121 ] |
9
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1982 |
52. |
L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Continuous-wave injection lasers emitting in the 1.5–1.6 μ range”, Kvantovaya Elektronika, 9:9 (1982), 1749 [Sov J Quantum Electron, 12:9 (1982), 1127 ] |
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1980 |
53. |
Ya. A. Aarik, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, P. A. Lyuk, B. N. Sverdlov, V. A. Skripkin, L. V. Friedentkhal', “Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range”, Kvantovaya Elektronika, 7:1 (1980), 91–96 [Sov J Quantum Electron, 10:1 (1980), 50–53 ] |
9
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1978 |
54. |
L. M. Dolginov, A. E. Drakin, P. G. Eliseev, T. V. Berdnikova, M. G. Mil'vidskii, V. P. Orlov, Yu. K. Panteleev, B. N. Sverdlov, E. G. Shevchenko, “High-efficiency GaInPAs/InP light-emitting diodes”, Kvantovaya Elektronika, 5:11 (1978), 2488–2489 [Sov J Quantum Electron, 8:11 (1978), 1404–1405] |
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