Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers

The spectral profile of the optical gain and the spectral dependence of the coefficient characterising the variation in the refractive index with a carrier concentration are calculated using the three-band model for an active quantum-well InGaAs layer. A comparison of the theoretical results with the experimental data gave values of parameters allowing the numerical simulation of the material parameters of the active layer with a high degree of accuracy.