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Kvantovaya Elektronika, 2000, Volume 30, Number 10, Pages 878–880 (Mi qe1826)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

Optical loss in strained quantum-well semiconductor ridge lasers

A. P. Bogatova, A. E. Boltasevab, A. E. Drakina, V. P. Konyaevc

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
c Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow
Full-text PDF (171 kB) Citations (1)
Abstract: The results of measurements of optical loss in semiconductor ridge lasers are presented. The InGaAs/AlGaAs/GaAs single-quantum-well semiconductor lasers are studied in the spectral range from 1019 to 1042 nm, which corresponds to the long wavelength wing of the mode gain curve. It is shown that the dominant mechanism of optical loss appears to be light scattering by optical inhomogeneities of the laser waveguide, while the free-carrier absorption is negligible in the lasers studied.
Received: 23.05.2000
English version:
Quantum Electronics, 2000, Volume 30, Issue 10, Pages 878–880
DOI: https://doi.org/10.1070/QE2000v030n10ABEH001826
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Lh
Language: Russian


Citation: A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, V. P. Konyaev, “Optical loss in strained quantum-well semiconductor ridge lasers”, Kvantovaya Elektronika, 30:10 (2000), 878–880 [Quantum Electron., 30:10 (2000), 878–880]
Linking options:
  • https://www.mathnet.ru/eng/qe1826
  • https://www.mathnet.ru/eng/qe/v30/i10/p878
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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