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This article is cited in 2 scientific papers (total in 2 papers)
Lasers
Modes of a semiconductor rectangular microcavity
D. V. Batrak, A. P. Bogatov, A. E. Drakin, N. V. D'yachkov, D. R. Miftakhutdinov P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Abstract:
The mode parameters of a rectangular cavity of a semiconductor laser emitting in the range from 850 to 880 nm are numerically calculated and analysed. Nearly quadratic microcavities with a side of length ~10 μm are considered. It is shown that, unlike a Fabry–Perot cavity, a rectangular cavity has a much more dense system of nonequidistant modes, which in principle cannot be interpreted as modes of an "efficient" Fabry–Perot cavity or a ring cavity. The maximum Q factor of modes in the cavities under study can exceed 105, which corresponds to the reduced intracavity loss ~3 cm-1. The radiation field of the cavity can be interpreted as the field of four coherent sources located at the cavity corners.
Received: 22.05.2007
Citation:
D. V. Batrak, A. P. Bogatov, A. E. Drakin, N. V. D'yachkov, D. R. Miftakhutdinov, “Modes of a semiconductor rectangular microcavity”, Kvantovaya Elektronika, 38:1 (2008), 16–22 [Quantum Electron., 38:1 (2008), 16–22]
Linking options:
https://www.mathnet.ru/eng/qe13633 https://www.mathnet.ru/eng/qe/v38/i1/p16
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