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This article is cited in 21 scientific papers (total in 21 papers)
Special issue devoted to the 80th anniversary of academician N. G. Basov's birth
High-power single-transverse-mode ridge optical waveguide semiconductor lasers
V. V. Popovicheva, E. I. Davydovaa, A. A. Marmalyuka, A. V. Simakova, M. B. Uspenskiya, A. A. Chel'nyia, A. P. Bogatovb, A. E. Drakinb, S. A. Plisyukc, A. A. Stratonnikovc a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
c Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
Abstract:
More than 200 mW of a single-transverse-mode cw output power is produced from a semiconductor heterolaser by optimising the waveguide properties of its ridge structure. The laser-beam divergence is close to the diffraction limit and its brightness exceeds 5 × 107 W cm-2 sr-1. The calculated and experimental parameters of the laser beam are coincident with a high accuracy, which allows their reliable simulation.
Received: 04.10.2002
Citation:
V. V. Popovichev, E. I. Davydova, A. A. Marmalyuk, A. V. Simakov, M. B. Uspenskiy, A. A. Chel'nyi, A. P. Bogatov, A. E. Drakin, S. A. Plisyuk, A. A. Stratonnikov, “High-power single-transverse-mode ridge optical waveguide semiconductor lasers”, Kvantovaya Elektronika, 32:12 (2002), 1099–1104 [Quantum Electron., 32:12 (2002), 1099–1104]
Linking options:
https://www.mathnet.ru/eng/qe2352 https://www.mathnet.ru/eng/qe/v32/i12/p1099
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