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Kvantovaya Elektronika, 1999, Volume 26, Number 1, Pages 28–32 (Mi qe1406)  

This article is cited in 6 scientific papers (total in 6 papers)

Lasers

Efficiency and intensity distribution in a semiconductor laser operating in the ‘leaky’ regime

A. P. Bogatova, A. E. Drakina, V. I. Shveikinb

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Full-text PDF (235 kB) Citations (6)
Abstract: The differential efficiency is calculated for a semi-conductor laser having an optical waveguide with a wave leaking out into the substrate. The differential efficiency is shown to be close to the limit if the optical quality of the substrate (with losses ~1 cm–1 or less) is sufficiently high and the remaining laser parameters have typical and attainable values. Optimisation of the parameters of such a laser makes it possible to increase the output power severalfold compared with the power of a laser generating a conventional waveguide mode without radiation leakage.
Received: 28.09.1998
English version:
Quantum Electronics, 1999, Volume 29, Issue 1, Pages 28–32
DOI: https://doi.org/10.1070/QE1999v029n01ABEH001406
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Da
Language: Russian


Citation: A. P. Bogatov, A. E. Drakin, V. I. Shveikin, “Efficiency and intensity distribution in a semiconductor laser operating in the ‘leaky’ regime”, Kvantovaya Elektronika, 26:1 (1999), 28–32 [Quantum Electron., 29:1 (1999), 28–32]
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  • https://www.mathnet.ru/eng/qe1406
  • https://www.mathnet.ru/eng/qe/v26/i1/p28
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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