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This article is cited in 6 scientific papers (total in 6 papers)
Lasers
Efficiency and intensity distribution in a semiconductor laser operating in the ‘leaky’ regime
A. P. Bogatova, A. E. Drakina, V. I. Shveikinb a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
The differential efficiency is calculated for a semi-conductor laser having an optical waveguide with a wave leaking out into the substrate. The differential efficiency is shown to be close to the limit if the optical quality of the substrate (with losses ~1 cm–1 or less) is sufficiently high and the remaining laser parameters have typical and attainable values. Optimisation of the parameters of such a laser makes it possible to increase the output power severalfold compared with the power of a laser generating a conventional waveguide mode without radiation leakage.
Received: 28.09.1998
Citation:
A. P. Bogatov, A. E. Drakin, V. I. Shveikin, “Efficiency and intensity distribution in a semiconductor laser operating in the ‘leaky’ regime”, Kvantovaya Elektronika, 26:1 (1999), 28–32 [Quantum Electron., 29:1 (1999), 28–32]
Linking options:
https://www.mathnet.ru/eng/qe1406 https://www.mathnet.ru/eng/qe/v26/i1/p28
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