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Kvantovaya Elektronika, 2006, Volume 36, Number 8, Pages 745–750 (Mi qe13169)  

This article is cited in 3 scientific papers (total in 3 papers)

Lasers

Spectral properties of a semiconductor α-DFB laser cavity

A. P. Bogatova, A. E. Drakina, D. V. Batraka, R. Gütherb, K. Paschkeb, H. Wenzelb

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Ferdinand-Braun Institut für Höchstfrequenztechnik, Germany
Full-text PDF (217 kB) Citations (3)
Abstract: The experimental and theoretical investigations of spectral properties of a semiconductor α-DFB laser cavity are carried out. It is shown that in these lasers the curvature of mode gain spectra near the maximum is higher by more than two orders of magnitude than in conventional semiconductor lasers with a Fabry–Perot cavity. The distance between the adjacent axial modes of an α-DFB laser is shorter than in the case of a Fabry–Perot cavity laser of the same length, and its experimental value agrees well with the value obtained in the simple geometrical model, taking into account a zigzag propagation of radiation inside the cavity.
Received: 04.04.2006
English version:
Quantum Electronics, 2006, Volume 36, Issue 8, Pages 745–750
DOI: https://doi.org/10.1070/QE2006v036n08ABEH013169
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Da, 42.60.Jf
Language: Russian


Citation: A. P. Bogatov, A. E. Drakin, D. V. Batrak, R. Güther, K. Paschke, H. Wenzel, “Spectral properties of a semiconductor α-DFB laser cavity”, Kvantovaya Elektronika, 36:8 (2006), 745–750 [Quantum Electron., 36:8 (2006), 745–750]
Linking options:
  • https://www.mathnet.ru/eng/qe13169
  • https://www.mathnet.ru/eng/qe/v36/i8/p745
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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