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Kvantovaya Elektronika, 2002, Volume 32, Number 9, Pages 809–814 (Mi qe2296)  

This article is cited in 4 scientific papers (total in 4 papers)

Lasers

Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers

A. P. Bogatova, A. E. Drakina, S. A. Plisyukb, A. A. Stratonnikovb, M. Sh. Kobyakovac, A. V. Zubanovc, A. A. Marmalyukc, A. A. Padalitsac

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
c Open Joint-Stock Company M. F. Stel'makh Polyus Research Institute, Moscow
Full-text PDF (157 kB) Citations (4)
Abstract: It is shown that for an average output power of 60 mW, the spectral density of low-frequency intensity fluctuations in single-mode semiconductor lasers lies in the interval 6 × 10-17 – 10-15 W2 Hz-1. This fluctuation level is caused by the presence of subthreshold longitudinal modes and mode hopping, leading to the emergence of a noticeable 1/f component in their spectrum.
Received: 17.07.2002
English version:
Quantum Electronics, 2002, Volume 32, Issue 9, Pages 809–814
DOI: https://doi.org/10.1070/QE2002v032n09ABEH002296
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Mi
Language: Russian


Citation: A. P. Bogatov, A. E. Drakin, S. A. Plisyuk, A. A. Stratonnikov, M. Sh. Kobyakova, A. V. Zubanov, A. A. Marmalyuk, A. A. Padalitsa, “Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers”, Kvantovaya Elektronika, 32:9 (2002), 809–814 [Quantum Electron., 32:9 (2002), 809–814]
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  • https://www.mathnet.ru/eng/qe/v32/i9/p809
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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