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This article is cited in 5 scientific papers (total in 5 papers)
Lasers
Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers
A. P. Bogatova, A. E. Boltasevab, A. E. Drakina, M. A. Belkinb, V. P. Konyaevc a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
c "Polyus" Research Institute, Federal State Enterprise, Moscow
Abstract:
A technique to determine experimentally the amplitude—phase coupling factor (α factor) in semiconductor laser diodes is proposed. The factor was obtained for InGaAs/AlGaAs/GaAs single-quantum-well lasers with injected-carrier concentrations from 1.5 × 1018 to 6 × 1018 cm-3. It is shown that the α factor for such structures at the maximum of mode gain lies in the range 2 — 9, and its value for one and the same structure may differ severalfold, depending on the operating point of a laser.
Received: 28.10.1999
Citation:
A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, M. A. Belkin, V. P. Konyaev, “Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers”, Kvantovaya Elektronika, 30:4 (2000), 315–320 [Quantum Electron., 30:4 (2000), 315–320]
Linking options:
https://www.mathnet.ru/eng/qe1721 https://www.mathnet.ru/eng/qe/v30/i4/p315
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