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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
K. A. Mazhukina, V. V. Rumyantsev, A. A. Dubinov, V. V. Utochkin, A. A. Razova, M. A. Fadeev, K. E. Spirin, M. S. Zholudev, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko, S. V. Morozov, “Generation of long-wavelength stimulated emission in HgCdTe quantum wells with an increased Auger recombination threshold”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:5 (2023), 311–316  ; JETP Letters, 118:5 (2023), 309–314 |
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2022 |
| 2. |
M. S. Zholudev, V. V. Rumyantsev, S. V. Morozov, “Calculation of bound and resonant levels of acceptors in narrow-gap CdHgTe solid solutions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:5 (2022), 307–312 ; JETP Letters, 116:5 (2022), 313–318 |
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2021 |
| 3. |
D. V. Kozlov, T. A. Uaman Svetikova, A. V. Ikonnikov, V. V. Rumyantsev, A. A. Razova, M. S. Zholudev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, “Photothermal ionization spectroscopy of mercury vacancies in HgCdTe epitaxial films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:6 (2021), 399–405  ; JETP Letters, 113:6 (2021), 402–408   |
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| 4. |
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, D. A. Mikhailov, D. V. Chistyakov, D. I. Kuritsyn, V. V. Dyudelev, S. O. Slipchenko, A. V. Lyutetskiy, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, S. V. Morozov, G. S. Sokolovskii, N. A. Pikhtin, A. Yu. Egorov, “Quantum-cascade laser with radiation output through a textured layer”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1081–1085 ; Semiconductors, 56:1 (2022), 1–4 |
| 5. |
R. A. Khabibullin, K. V. Marem'yanin, D. S. Ponomarev, R. R. Galiev, A. A. Zaitsev, A. I. Danilov, I. S. Vasil'evskii, A. N. Vinichenko, A. N. Klochkov, A. A. Afonenko, D. V. Ushakov, S. V. Morozov, V. I. Gavrilenko, “3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 989–994 |
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| 6. |
V. V. Utochkin, A. A. Dubinov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, “Effect of internal optical losses on the generation of mid-IR stimulated emission in waveguide heterostructures with HgCdTe/CdHgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 922–926 ; Semiconductors, 55:12 (2021), 899–902 |
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| 7. |
M. S. Zholudev, V. V. Rumyantsev, S. V. Morozov, “Calculation of the temperature dependence of the Coulomb-acceptor state energy in a narrow-gap HgCdTe solid solution”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 861–868 ; Semiconductors, 55:12 (2021), 907–913 |
| 8. |
V. V. Rumyantsev, A. P. Fokin, A. A. Dubinov, S. S. Morozov, A. A. Bogdashov, V. Parshin, M. Yu. Glyavin, V. I. Gavrilenko, S. V. Morozov, “Calculation of the efficiency of doubling the radiation of a sub-THz gyrotron dueto lattice nonlinearity in a single crystal InP plate”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 855–860 |
| 9. |
V. V. Rumyantsev, K. V. Marem'yanin, A. P. Fokin, A. A. Dubinov, A. A. Razova, N. N. Mikhailov, S. A. Dvoretskii, M. Yu. Glyavin, V. I. Gavrilenko, S. V. Morozov, “Generation of terahertz radiation in InP : Fe crystals due to second-order lattice nonlinearity”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 813–817 ; Semiconductors, 55:10 (2021), 785–789 |
| 10. |
A. A. Dubinov, V. V. Rumyantsev, M. A. Fadeev, V. V. Utochkin, S. V. Morozov, “Dielectric waveguide optimization for the laser structures with HgTe/CdHgTe QWs emitting in far-infrared range”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 455–459 |
| 11. |
M. S. Zholudev, V. V. Rumyantsev, S. V. Morozov, “Calculation of Coulomb acceptor resonant states in zero-gap semiconductors”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 391–396 ; Semiconductors, 55:6 (2021), 537–541 |
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| 12. |
V. S. Evstigneev, A. V. Chilyasov, A. N. Moiseev, S. V. Morozov, D. I. Kuritsyn, “Arsenic doping upon the deposition of CdTe layers from dimethylcadmium and diisopropyltellurium”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 9–15 ; Semiconductors, 55:1 (2021), 7–13 |
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| 13. |
S. V. Morozov, M. S. Zholudev, “Application of the scattering matrix method for calculation of impurity states in semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 26–29 ; Tech. Phys. Lett., 47:5 (2021), 360–363 |
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| 14. |
S. V. Morozov, V. V. Utochkin, V. V. Rumyantsev, M. A. Fadeev, A. A. Razova, V. Ya. Aleshkin, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, “Express characterization of the HgCdTe/CdHgTe quantum well waveguide heterostructures with the quasi-relativistic carrier dispersion law by room-temperature photoluminescence spectroscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021), 51–54 ; Tech. Phys. Lett., 47:2 (2021), 154–157 |
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| 15. |
A. A. Dubinov, V. Ya. Aleshkin, V. I. Gavrilenko, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, V. V. Utochkin, S. V. Morozov, “THz laser generation on a hybrid surface plasmon in a HgCdTe-based structure”, Kvantovaya Elektronika, 51:2 (2021), 158–163 [Quantum Electron., 51:2 (2021), 158–163 ] |
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2020 |
| 16. |
A. V. Antonov, A. I. Elkina, V. K. Vasil'ev, M. A. Galin, D. V. Masterov, A. N. Mikhaylov, S. V. Morozov, S. A. Pavlov, A. E. Parafin, D. I. Tetelbaum, S. S. Ustavshchikov, P. A. Yunin, D. A. Savinov, “Experimental observation of $s$-component of superconducting pairing in thin disordered HTSC films based on YBCO”, Fizika Tverdogo Tela, 62:9 (2020), 1434–1439 ; Phys. Solid State, 62:9 (2020), 1598–1603 |
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| 17. |
I. D. Nikolaev, T. A. Uaman Svetikova, V. V. Rumyantsev, M. S. Zholudev, D. V. Kozlov, S. V. Morozov, S. A. Dvoretsky, N. N. Mikhailov, V. I. Gavrilenko, A. V. Ikonnikov, “Probing states of a double acceptor in ÑdHgTe heterostructures via optical gating”, Pis'ma v Zh. Èksper. Teoret. Fiz., 111:10 (2020), 682–688 ; JETP Letters, 111:10 (2020), 575–581 |
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| 18. |
V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, A. A. Razova, S. V. Morozov, “Continuous-wave stimulated emission in the 10–14-$\mu$m range under optical excitation in HgCdTe/CdHgTe structures with quasirelativistic dispersion”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1169–1173 ; Semiconductors, 54:10 (2020), 1371–1375 |
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| 19. |
L. A. Kushkov, V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, A. A. Razova, S. V. Morozov, “Investigation of stimulated emission from HgTe/CdHgTe quantum-well heterostructures in the 3–5 $\mu$m atmospheric transparency window”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1163–1168 ; Semiconductors, 54:10 (2020), 1365–1370 |
| 20. |
V. V. Utochkin, M. A. Fadeev, S. S. Krishtopenko, V. V. Rumyantsev, V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, V. I. Gavrilenko, “Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 929–932 ; Semiconductors, 54:9 (2020), 1119–1122 |
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| 21. |
V. V. Rumyantsev, K. V. Marem'yanin, A. A. Razova, S. M. Sergeev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, “Investigation of the photosensitivity of narrow-gap and gapless HgCdTe solid solutions in the terahertz and sub-terahertz range”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 906–912 ; Semiconductors, 54:9 (2020), 1096–1102 |
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| 22. |
G. E. Cirlin, R. R. Reznik, A. E. Zhukov, R. A. Khabibullin, K. V. Marem'yanin, V. I. Gavrilenko, S. V. Morozov, “Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 902–905 ; Semiconductors, 54:9 (2020), 1092–1095 |
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| 23. |
R. R. Reznik, V. O. Gridchin, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 884–887 ; Semiconductors, 54:9 (2020), 1075–1077 |
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| 24. |
K. V. Marem'yanin, V. Parshin, E. A. Serov, V. V. Rumyantsev, K. E. Kudryavtsev, A. A. Dubinov, A. P. Fokin, S. S. Morozov, V. Ya. Aleshkin, M. Yu. Glyavin, G. G. Denisov, S. V. Morozov, “Investigation into microwave absorption in semiconductors for frequency-multiplication devices and radiation-output control of continuous and pulsed gyrotrons”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 878–883 ; Semiconductors, 54:9 (2020), 1069–1074 |
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| 25. |
M. S. Zholudev, D. V. Kozlov, N. S. Kulikov, A. A. Razova, V. I. Gavrilenko, S. V. Morozov, “Calculation of wave functions of resonant acceptor states in narrow-gap CdHgTe compounds”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 695–699 ; Semiconductors, 54:8 (2020), 827–831 |
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2019 |
| 26. |
A. V. Antonov, A. V. Ikonnikov, D. V. Masterov, A. N. Mikhaylov, S. V. Morozov, Yu. N. Nozdrin, S. A. Pavlov, A. E. Parafin, D. I. Tetelbaum, S. S. Ustavshchikov, P. A. Yunin, D. A. Savinov, “Phase diagrams of thin disordered films based on HTSC YBa$_{2}$Cu$_{3}$O$_{7-x}$ in external magnetic fields”, Fizika Tverdogo Tela, 61:9 (2019), 1573–1578 ; Phys. Solid State, 61:9 (2019), 1523–1528 |
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| 27. |
V. A. Solov'ev, M. Yu. Chernov, S. V. Morozov, K. E. Kudryavtsev, A. A. Sitnikova, S. V. Ivanov, “Stimulated emission at a wavelength of $2.86 \mu$m from In(Sb, As)/In(Ga, Al)As/GaAs metamorphic quantum wells under optical pumping”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:5 (2019), 297–302 ; JETP Letters, 110:5 (2019), 313–318 |
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| 28. |
D. V. Kozlov, V. V. Rumyantsev, A. M. Kadykov, M. A. Fadeev, N. S. Kulikov, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, H. W. Hubers, F. Teppe, S. V. Morozov, “Features of photoluminescence of double acceptors in HgTe/CdHgTe heterostructures with quantum wells in a terahertz range”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:10 (2019), 679–684 ; JETP Letters, 109:10 (2019), 657–662 |
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| 29. |
S. S. Krishtopenko, S. Ruffenach, F. Gonzalez-Posada, C. Consejo, W. Desrat, B. Jouault, W. Knap, M. A. Fadeev, A. M. Kadykov, V. V. Rumyantsev, S. V. Morozov, G. Boissier, E. Tournié, V. I. Gavrilenko, F. Teppe, “Terahertz spectroscopy of two-dimensional semimetal in three-layer InAs/GaSb/InAs quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:2 (2019), 91–97 ; JETP Letters, 109:2 (2019), 96–101 |
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| 30. |
T. A. Uaman Svetikova, A. V. Ikonnikov, V. V. Rumyantsev, D. V. Kozlov, V. I. Chernichkin, A. V. Galeeva, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Evolution of the impurity photoconductivity in CdHgTe epitaxial films with temperature”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1297–1302 ; Semiconductors, 53:9 (2019), 1266–1271 |
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| 31. |
V. V. Rumyantsev, K. V. Marem'yanin, A. P. Fokin, A. A. Dubinov, V. V. Utochkin, M. Yu. Glyavin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Second-harmonic generation of subterahertz gyrotron radiation by frequency doubling in InP : Fe and its application for magnetospectroscopy of semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1244–1249 ; Semiconductors, 53:9 (2019), 1217–1221 |
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| 32. |
D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, “Spectra of double acceptors in layers of barriers and quantum wells of HgTe/ÑdHgTe heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1224–1228 ; Semiconductors, 53:9 (2019), 1198–1202 |
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| 33. |
V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, “Study of the auger recombination energy threshold in a series of waveguide heterostructures with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te QWs near 14 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1178–1181 ; Semiconductors, 53:9 (2019), 1154–1157 |
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| 34. |
R. R. Reznik, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 48–50 ; Tech. Phys. Lett., 45:11 (2019), 1111–1113 |
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| 35. |
A. A. Dubinov, V. Ya. Aleshkin, S. V. Morozov, “Generation of THz radiation at a difference frequency in a HgCdTe-based laser”, Kvantovaya Elektronika, 49:7 (2019), 689–692 [Quantum Electron., 49:7 (2019), 689–692 ] |
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| 36. |
M. A. Fadeev, A. A. Dubinov, V. Ya. Aleshkin, V. V. Rumyantsev, V. V. Utochkin, V. I. Gavrilenko, F. Teppe, H.-W. Hübers, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, “Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/Cd<sub>x</sub>Hg<sub>1-x</sub>Te quantum wells, emitting at a wavelength of 18 μm”, Kvantovaya Elektronika, 49:6 (2019), 556–558 [Quantum Electron., 49:6 (2019), 556–558 ] |
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2018 |
| 37. |
V. V. Rumyantsev, N. S. Kulikov, A. M. Kadykov, M. A. Fadeev, A. V. Ikonnikov, A. S. Kazakov, M. S. Zholudev, V. Ya. Aleshkin, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Effect of features of the band spectrum on the characteristics of stimulated emission in narrow-gap heterostructures with HgCdTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1263–1267 ; Semiconductors, 52:11 (2018), 1375–1379 |
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| 38. |
D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, H.-W. Hübers, V. I. Gavrilenko, “Calculation of multiply charged states of impurity-defect centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te layers”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1257–1262 ; Semiconductors, 52:11 (2018), 1369–1374 |
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| 39. |
A. A. Dubinov, V. Ya. Aleshkin, S. V. Morozov, “Lowering the lasing threshold by doping in mid-infrared lasers based on HgCdTe with HgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1100–1103 ; Semiconductors, 52:9 (2018), 1221–1224 |
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| 40. |
V. V. Rumyantsev, L. S. Bovkun, A. M. Kadykov, M. A. Fadeev, A. A. Dubinov, V. Ya. Aleshkin, N. N. Mikhailov, S. A. Dvoretsky, B. Piot, M. Orlita, M. Potemski, F. Teppe, S. V. Morozov, V. I. Gavrilenko, “Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 464 ; Semiconductors, 52:4 (2018), 436–441 |
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2017 |
| 41. |
V. V. Rumyantsev, A. M. Kadykov, M. A. Fadeev, A. A. Dubinov, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1616–1620 ; Semiconductors, 51:12 (2017), 1557–1561 |
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| 42. |
A. V. Ikonnikov, L. S. Bovkun, V. V. Rumyantsev, S. S. Krishtopenko, V. Ya. Aleshkin, A. M. Kadykov, M. Orlita, M. Potemski, V. I. Gavrilenko, S. V. Morozov, S. A. Dvoretskii, N. N. Mikhailov, “On the band spectrum in $p$-type HgTe/CdHgTe heterostructures and its transformation under temperature variation”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1588–1593 ; Semiconductors, 51:12 (2017), 1531–1536 |
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| 43. |
A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, V. I. Gavrilenko, A. Yu. Pavlov, N. V. Shchavruk, R. A. Khabibullin, R. R. Reznik, G. E. Cirlin, F. I. Zubov, A. E. Zhukov, Zh. I. Alferov, “Terahertz radiation generation in multilayer quantum-cascade heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017), 86–94 ; Tech. Phys. Lett., 43:4 (2017), 362–365 |
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2016 |
| 44. |
A. N. Akimov, A. E. Klimov, S. V. Morozov, S. P. Suprun, V. S. Epov, A. V. Ikonnikov, M. A. Fadeev, V. V. Rumyantsev, “Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1713–1719 ; Semiconductors, 50:12 (2016), 1684–1690 |
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| 45. |
D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, F. Teppe, “Mercury vacancies as divalent acceptors in HgTe/Cd$_{x}$Hg$_{1-x}$Te structures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1690–1696 ; Semiconductors, 50:12 (2016), 1662–1668 |
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| 46. |
V. V. Rumyantsev, M. A. Fadeev, S. V. Morozov, A. A. Dubinov, K. E. Kudryavtsev, A. M. Kadykov, I. V. Tuzov, S. A. Dvoretskii, N. N. Mikhailov, V. I. Gavrilenko, F. Teppe, “Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1679–1684 ; Semiconductors, 50:12 (2016), 1651–1656 |
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| 47. |
V. N. Trukhin, A. D. Bouravlev, I. A. Mustafin, G. E. Cirlin, D. I. Kuritsyn, V. V. Rumyantsev, S. V. Morozov, J. P. Kakko, T. Huhtio, H. Lipsanen, “Resonant features of the terahertz generation in semiconductor nanowires”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1587–1591 ; Semiconductors, 50:12 (2016), 1561–1565 |
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| 48. |
A. N. Yablonskii, S. V. Morozov, D. M. Gaponova, V. Ya. Aleshkin, V. G. Shengurov, B. N. Zvonkov, O. V. Vikhrova, N. V. Baidus, Z. F. Krasil'nik, “Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1455–1458 ; Semiconductors, 50:11 (2016), 1435–1438 |
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2014 |
| 49. |
M. S. Zholudev, F. Teppe, S. V. Morozov, M. Orlita, C. Consejo, S. Ruffenach, W. Knap, V. I. Gavrilenko, S. A. Dvoretskii, N. N. Mikhailov, “Anticrossing of Landau levels in HgTe/CdHgTe (013) quantum wells with an inverted band structure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 895–899 ; JETP Letters, 100:12 (2014), 790–794 |
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